All Transistors. 2SD699 Datasheet

 

2SD699 Datasheet and Replacement


   Type Designator: 2SD699
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO3
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2SD699 Datasheet (PDF)

 9.1. Size:102K  toshiba
 2sd647 2sd697.pdf pdf_icon

2SD699

 9.2. Size:125K  panasonic
 2sd691 2sd692.pdf pdf_icon

2SD699

 9.3. Size:86K  panasonic
 2sd693.pdf pdf_icon

2SD699

 9.4. Size:209K  inchange semiconductor
 2sd692.pdf pdf_icon

2SD699

isc Silicon NPN Darlingtion Power Transistor 2SD692DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 1000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier a

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD1693 | MMBT5141 | 2SC3951 | 2SC3422O | 3DD5G | 2N6341A | DTL1642

Keywords - 2SD699 transistor datasheet

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