2SD699 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD699
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO3
2SD699 Transistor Equivalent Substitute - Cross-Reference Search
2SD699 Datasheet (PDF)
2sd692.pdf
isc Silicon NPN Darlingtion Power Transistor 2SD692DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 1000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier a
2sd693.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD693DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 450V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
2sd690.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD690DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 70V(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
