2SD699 Specs and Replacement
Type Designator: 2SD699
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO3
2SD699 Substitution
- BJT ⓘ Cross-Reference Search
2SD699 datasheet
isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a... See More ⇒
Detailed specifications: 2SD693 , 2SD694 , 2SD695 , 2SD696 , 2SD696A , 2SD697 , 2SD697A , 2SD698 , 2N3906 , 2SD70 , 2SD700 , 2SD702 , 2SD703 , 2SD704 , 2SD705 , 2SD706 , 2SD707 .
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