2SD709 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD709
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO3
2SD709 Transistor Equivalent Substitute - Cross-Reference Search
2SD709 Datasheet (PDF)
2sd705.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD705DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE
2sd706.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD706DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
