2SD709 Specs and Replacement

Type Designator: 2SD709

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO3

 2SD709 Substitution

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2SD709 datasheet

 9.1. Size:181K  inchange semiconductor

 2sd705.pdf pdf_icon

2SD709

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD705 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE ... See More ⇒

 9.2. Size:182K  inchange semiconductor

 2sd706.pdf pdf_icon

2SD709

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD706 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE ... See More ⇒

Detailed specifications: 2SD700, 2SD702, 2SD703, 2SD704, 2SD705, 2SD706, 2SD707, 2SD708, A733, 2SD71, 2SD710, 2SD711A, 2SD712, 2SD712A, 2SD713, 2SD715, 2SD716

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