2SD718 Specs and Replacement
The 2SD718 is an NPN bipolar power transistor designed for high-current, high-voltage applications. Housed in a TO3P package, it typically handles up to 8A of collector current and supports collector-emitter voltages around 120V, making it suitable for audio amplifiers, power supplies, motor drivers. With a transition frequency near 4-6MHz and good linearity, it performs well in high-fidelity output stages. Its robust thermal characteristics and low saturation voltage help ensure stable operation under heavy loads.
Type Designator: 2SD718
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80
W
Maximum Collector-Base Voltage |Vcb|: 120
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 6
MHz
Collector Capacitance (Cc): 170
pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3P
2SD718 Transistor Equivalent Substitute - Cross-Reference Search
2SD718 detailed specifications
..1. Size:106K utc
2sd718.pdf 
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage... See More ⇒
..4. Size:252K first silicon
2sd718 to3p.pdf
SEMICONDUCTOR 2SD718 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte... See More ⇒
..5. Size:218K inchange semiconductor
2sd718.pdf
isc Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicati... See More ⇒
0.1. Size:195K cn sptech
2sd718r 2sd718o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
9.2. Size:89K wingshing
2sd716.pdf
2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 100 V Collector curre... See More ⇒
9.3. Size:88K wingshing
2sd717.pdf
Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 70 V CBO Collector-emitter voltage (open base) V - 70 V CEO Collector... See More ⇒
9.4. Size:196K cn sptech
2sd717o 2sd717y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C APPLICATIONS High power switching applications DC-DC converter and DC-AC inverter application... See More ⇒
9.5. Size:184K inchange semiconductor
2sd711.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD711 DESCRIPTION High DC Current Gain Low Collector Saturation Voltage Excellent Safe Operating Area High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor controls Inverters choppers Switching regulators G... See More ⇒
9.6. Size:219K inchange semiconductor
2sd716.pdf
isc Silicon NPN Power Transistor 2SD716 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V (Max)@I = 4A CE(sat) C Complement to Type 2SB686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 30 35W high-fid... See More ⇒
9.7. Size:218K inchange semiconductor
2sd717.pdf
isc Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applicat... See More ⇒
9.8. Size:194K inchange semiconductor
2sd715.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD715 DESCRIPTION High DC Current Gain h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power am... See More ⇒
Detailed specifications: 2SD713
, 2SD715
, 2SD716
, 2SD716O
, 2SD716R
, 2SD717
, 2SD717O
, 2SD717Y
, TIP31
, 2SD718O
, 2SD718R
, 2SD72
, 2SD720
, 2SD721
, 2SD722
, 2SD723
, 2SD724
.
History: MJE3055TG
Keywords - 2SD718 transistor specs
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