2SD718R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD718R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3P
2SD718R Transistor Equivalent Substitute - Cross-Reference Search
2SD718R Datasheet (PDF)
2sd718r 2sd718o.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
2sd718.pdf
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage
2sd718.pdf
NPN Silicon NPN Triple Diffused Transistor R 2SD718 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltageV =110V (min) CEO CEOV =180V (min) V =180V (min) CEO CEO 2SB688 Complementary to 2SB688
2sd718 to3p.pdf
SEMICONDUCTOR2SD718TECHNICAL DATANPN EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATIONFEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte
2sd718.pdf
isc Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicati
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
