2SD72 Specs and Replacement

Type Designator: 2SD72

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.21 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 0.3 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO1

 2SD72 Substitution

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2SD72 datasheet

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2SD72

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 2sd725.pdf pdf_icon

2SD72

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD725 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒

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 2sd728.pdf pdf_icon

2SD72

isc Silicon NPN Power Transistor 2SD728 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB692 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE... See More ⇒

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Detailed specifications: 2SD716O, 2SD716R, 2SD717, 2SD717O, 2SD717Y, 2SD718, 2SD718O, 2SD718R, 2SD2499, 2SD720, 2SD721, 2SD722, 2SD723, 2SD724, 2SD725, 2SD726, 2SD727

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