2SD726 Specs and Replacement
Type Designator: 2SD726
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO220
2SD726 Substitution
- BJT ⓘ Cross-Reference Search
2SD726 datasheet
isc Silicon NPNPower Transistor 2SD726 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SB690 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD725 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒
Detailed specifications: 2SD718R, 2SD72, 2SD720, 2SD721, 2SD722, 2SD723, 2SD724, 2SD725, 2SC945, 2SD727, 2SD728, 2SD729, 2SD729H, 2SD72K, 2SD73, 2SD730, 2SD73-0
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