2N2413 Specs and Replacement
Type Designator: 2N2413
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
2N2413 Transistor Equivalent Substitute - Cross-Reference Search
2N2413 detailed specifications
2n2411 2n2412.pdf
DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS SYMBOL UNITS Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA ... See More ⇒
2n2412x.pdf
2N2412X Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA... See More ⇒
2n2411x.pdf
2N2411X Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA... See More ⇒
Detailed specifications: 2N2405 , 2N2405L , 2N2405S , 2N241 , 2N2410 , 2N2410-51 , 2N2411 , 2N2412 , D667 , 2N2414 , 2N2415 , 2N2416 , 2N241A , 2N242 , 2N2423 , 2N2424 , 2N2425 .
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