All Transistors. 2SD751 Datasheet

 

2SD751 Datasheet and Replacement


   Type Designator: 2SD751
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO218
 

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2SD751 Datasheet (PDF)

 ..1. Size:128K  panasonic
 2sb713 2sd751.pdf pdf_icon

2SD751

 9.1. Size:67K  hitachi
 2sd757 2sd758.pdf pdf_icon

2SD751

 9.2. Size:31K  hitachi
 2sd755 2sd756.pdf pdf_icon

2SD751

2SD755, 2SD756, 2SD756ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD755, 2SD756, 2SD756AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD755 2SD756 2SD756A UnitCollector to base voltage VCBO 100 120 140 VCollector to emitter vol

 9.3. Size:207K  inchange semiconductor
 2sd750.pdf pdf_icon

2SD751

isc Silicon NPN Power Transistor 2SD750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNIT

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N5346 | BCP868 | 2N5348 | 2N4889 | 2N5101 | 2N5349 | 2N5098

Keywords - 2SD751 transistor datasheet

 2SD751 cross reference
 2SD751 equivalent finder
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