2SD75A Specs and Replacement
Type Designator: 2SD75A
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO1
2SD75A Substitution
- BJT ⓘ Cross-Reference Search
2SD75A datasheet
2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD755 2SD756 2SD756A Unit Collector to base voltage VCBO 100 120 140 V Collector to emitter vol... See More ⇒
isc Silicon NPN Power Transistor 2SD750 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT... See More ⇒
Detailed specifications: 2SD753, 2SD754, 2SD755, 2SD756, 2SD756A, 2SD757, 2SD758, 2SD759, 2N3055, 2SD75AH, 2SD75H, 2SD760, 2SD761, 2SD762, 2SD762A, 2SD763, 2SD764
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