All Transistors. 2SD75H Datasheet

 

2SD75H Datasheet and Replacement


   Type Designator: 2SD75H
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 1.5 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO1
 

 2SD75H Substitution

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2SD75H Datasheet (PDF)

 9.1. Size:128K  panasonic
 2sb713 2sd751.pdf pdf_icon

2SD75H

 9.2. Size:67K  hitachi
 2sd757 2sd758.pdf pdf_icon

2SD75H

 9.3. Size:31K  hitachi
 2sd755 2sd756.pdf pdf_icon

2SD75H

2SD755, 2SD756, 2SD756ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD755, 2SD756, 2SD756AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD755 2SD756 2SD756A UnitCollector to base voltage VCBO 100 120 140 VCollector to emitter vol

 9.4. Size:207K  inchange semiconductor
 2sd750.pdf pdf_icon

2SD75H

isc Silicon NPN Power Transistor 2SD750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNIT

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Datasheet: 2SD755 , 2SD756 , 2SD756A , 2SD757 , 2SD758 , 2SD759 , 2SD75A , 2SD75AH , A1015 , 2SD760 , 2SD761 , 2SD762 , 2SD762A , 2SD763 , 2SD764 , 2SD765 , 2SD766 .

Keywords - 2SD75H transistor datasheet

 2SD75H cross reference
 2SD75H equivalent finder
 2SD75H lookup
 2SD75H substitution
 2SD75H replacement

 

 
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