2SD836B Datasheet. Specs and Replacement
Type Designator: 2SD836B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 6000
Package: TO220
2SD836B Substitution
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2SD836B datasheet
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 DESCRIPTION High DC Current Gain- h = 1000(Min.)@I = 2A FE C High Switching Speed Complement to Type 2SB750 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Detailed specifications: 2SD830, 2SD831, 2SD832, 2SD833, 2SD834, 2SD835, 2SD836, 2SD836A, 2N3906, 2SD837, 2SD837A, 2SD837B, 2SD838, 2SD839, 2SD84, 2SD840, 2SD841
Keywords - 2SD836B pdf specs
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History: 2SC2886 | 2SC2887 | KTA733
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