2SD836B Datasheet. Specs and Replacement

Type Designator: 2SD836B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 6000

Noise Figure, dB: -

Package: TO220

 2SD836B Substitution

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2SD836B datasheet

 8.1. Size:195K  inchange semiconductor

2sd836.pdf pdf_icon

2SD836B

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 DESCRIPTION High DC Current Gain- h = 1000(Min.)@I = 2A FE C High Switching Speed Complement to Type 2SB750 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 9.1. Size:96K  fuji

2sd833.pdf pdf_icon

2SD836B

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

 9.2. Size:101K  fuji

2sd835.pdf pdf_icon

2SD836B

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

 9.3. Size:125K  fuji

2sd834.pdf pdf_icon

2SD836B

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Detailed specifications: 2SD830, 2SD831, 2SD832, 2SD833, 2SD834, 2SD835, 2SD836, 2SD836A, 2N3906, 2SD837, 2SD837A, 2SD837B, 2SD838, 2SD839, 2SD84, 2SD840, 2SD841

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