2SD875A Datasheet. Specs and Replacement
Type Designator: 2SD875A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT89
2SD875A Substitution
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2SD875A datasheet
Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB767 1.5 0.1 4.5 0.1 1.6 0.2 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08 ... See More ⇒
Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB767 1.5 0.1 4.5 0.1 1.6 0.2 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08 ... See More ⇒
SMD Type Transistors NPN Transistors 2SD875 Features 1.70 0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Complimentary to 2SB767 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter ... See More ⇒
Detailed specifications: 2SD869, 2SD870, 2SD871, 2SD872, 2SD873, 2SD874, 2SD874A, 2SD875, TIP120, 2SD876, 2SD877, 2SD878, 2SD879, 2SD88, 2SD880, 2SD880G, 2SD880O
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