2SD875A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD875A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT89
2SD875A Transistor Equivalent Substitute - Cross-Reference Search
2SD875A Datasheet (PDF)
2sd875 e.pdf
Transistor2SD875Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB7671.5 0.14.5 0.11.6 0.2FeaturesLarge collector power dissipation PC.High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.08
2sd875.pdf
Transistor2SD875Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB7671.5 0.14.5 0.11.6 0.2FeaturesLarge collector power dissipation PC.High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.08
2sd875.pdf
SMD Type TransistorsNPN Transistors2SD875 Features 1.70 0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Complimentary to 2SB7670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
