2SD875A Datasheet and Replacement
Type Designator: 2SD875A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT89
2SD875A Transistor Equivalent Substitute - Cross-Reference Search
2SD875A Datasheet (PDF)
2sd875 e.pdf
Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB767 1.5 0.1 4.5 0.1 1.6 0.2 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08 ... See More ⇒
2sd875.pdf
Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB767 1.5 0.1 4.5 0.1 1.6 0.2 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08 ... See More ⇒
2sd875.pdf
SMD Type Transistors NPN Transistors 2SD875 Features 1.70 0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Complimentary to 2SB767 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter ... See More ⇒
Datasheet: 2SD869 , 2SD870 , 2SD871 , 2SD872 , 2SD873 , 2SD874 , 2SD874A , 2SD875 , TIP120 , 2SD876 , 2SD877 , 2SD878 , 2SD879 , 2SD88 , 2SD880 , 2SD880G , 2SD880O .
History: 858AW
Keywords - 2SD875A transistor datasheet
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History: 858AW
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