All Transistors. 2SD900B Datasheet

 

2SD900B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD900B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: TO3

 2SD900B Transistor Equivalent Substitute - Cross-Reference Search

   

2SD900B Datasheet (PDF)

 8.1. Size:30K  no
2sd900.pdf

2SD900B

 8.2. Size:181K  inchange semiconductor
2sd900.pdf

2SD900B 2SD900B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD900DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection

 9.1. Size:45K  sanyo
2sd904.pdf

2SD900B

 9.2. Size:27K  no
2sd905.pdf

2SD900B

 9.3. Size:213K  inchange semiconductor
2sd907.pdf

2SD900B 2SD900B

isc Silicon NPN Power Transistor 2SD907DESCRIPTIONHigh Collector CurrentGood Linearity of hFEHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifierSeries regulatorsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.4. Size:128K  inchange semiconductor
2sd905.pdf

2SD900B 2SD900B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD905 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For high voltage power switching TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)

 9.5. Size:222K  inchange semiconductor
2sd909.pdf

2SD900B 2SD900B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD909DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Current CapabilityGood Linearity of hFEHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifierSeries regulatorsGenera

 9.6. Size:206K  inchange semiconductor
2sd904.pdf

2SD900B 2SD900B

isc Silicon NPN Power Transistor 2SD904DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2SD898 , 2SD898A , 2SD898B , 2SD899 , 2SD899A , 2SD90 , 2SD900 , 2SD900A , BC327 , 2SD901 , 2SD902 , 2SD903 , 2SD904 , 2SD905 , 2SD906 , 2SD907 , 2SD908 .

 

 
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