All Transistors. 2SD912 Datasheet

 

2SD912 Datasheet and Replacement


   Type Designator: 2SD912
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO3
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2SD912 Datasheet (PDF)

 9.1. Size:91K  panasonic
 2sd917.pdf pdf_icon

2SD912

 9.2. Size:94K  fuji
 2sd916.pdf pdf_icon

2SD912

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.3. Size:213K  inchange semiconductor
 2sd916.pdf pdf_icon

2SD912

isc Silicon NPN Darlington Power Transistor 2SD916DESCRIPTIONHigh DC Current GainLow Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay& solenoid driversMotor controlsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.4. Size:180K  inchange semiconductor
 2sd911.pdf pdf_icon

2SD912

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD911DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Current CapabilityGood Linearity of hFEHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifierSeries regulatorsGenera

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3DG302 | 2SB1188SQ-R | MJD45H11T4 | DTA144WET1G | AC122V | 3DF5 | 2SC5890

Keywords - 2SD912 transistor datasheet

 2SD912 cross reference
 2SD912 equivalent finder
 2SD912 lookup
 2SD912 substitution
 2SD912 replacement

 

 
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