2SD918 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD918
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: XM20
2SD918 Transistor Equivalent Substitute - Cross-Reference Search
2SD918 Datasheet (PDF)
5.1. 2sd917.pdf 
Size:91K _panasonic
5.2. 2sd916.pdf Size:94K _fuji
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
5.3. 2sd917.pdf Size:90K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD917 DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Em
5.4. 2sd916.pdf Size:261K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·High Reliability APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base
Datasheet: 2SD910 , 2SD911 , 2SD912 , 2SD913 , 2SD914 , 2SD915 , 2SD916 , 2SD917 , S9012 , 2SD919 , 2SD92 , 2SD920 , 2SD921 , 2SD922 , 2SD923 , 2SD926 , 2SD927 .
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BJT: LUMG3NT1G | LUMG2NT1G | LUMG10NT1G | LUMF23NDW1T1G | LUMC3NT1G | LUMA5NT1G | LRX102UT1G | LMUN5237T1G | LMUN5237DW1T1G | LMUN5236DW1T1G | LMUN5235T1G | LMUN5235DW1T1G | LMUN5234T1G | LMUN5234DW1T1G | LMUN5233T1G | LMUN5233DW1T1G | LMUN5232T1G | LMUN5232DW1T1G | LMUN5231T1G | LMUN5231DW1T1G |