2SD920 Datasheet. Specs and Replacement
Type Designator: 2SD920 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 700
Package: TO3
2SD920 Substitution
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2SD920 datasheet
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD920 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulators ,... See More ⇒
Detailed specifications: 2SD913, 2SD914, 2SD915, 2SD916, 2SD917, 2SD918, 2SD919, 2SD92, 2SC945, 2SD921, 2SD922, 2SD923, 2SD926, 2SD927, 2SD928, 2SD929, 2SD93
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