2SD926 Datasheet. Specs and Replacement

Type Designator: 2SD926  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

 2SD926 Substitution

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2SD926 datasheet

 9.1. Size:43K  fuji

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2SD926

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 9.4. Size:200K  inchange semiconductor

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2SD926

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD929 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO High Reliability Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... See More ⇒

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Detailed specifications: 2SD917, 2SD918, 2SD919, 2SD92, 2SD920, 2SD921, 2SD922, 2SD923, 2SC2655, 2SD927, 2SD928, 2SD929, 2SD93, 2SD930, 2SD931, 2SD932, 2SD933

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