2SD926 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD926
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SD926 Transistor Equivalent Substitute - Cross-Reference Search
2SD926 Datasheet (PDF)
2sd929.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD929DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOHigh ReliabilityGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC
2sd920.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD920DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for series regulators ,
2sd928.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD928DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power a
Datasheet: 2SD917 , 2SD918 , 2SD919 , 2SD92 , 2SD920 , 2SD921 , 2SD922 , 2SD923 , TIP2955 , 2SD927 , 2SD928 , 2SD929 , 2SD93 , 2SD930 , 2SD931 , 2SD932 , 2SD933 .
