3N77
Datasheet, Equivalent, Cross Reference Search
Type Designator: 3N77
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector Current |Ic max|: 0.02
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 30
MHz
Collector Capacitance (Cc): 8
pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO72
3N77
Transistor Equivalent Substitute - Cross-Reference Search
3N77
Datasheet (PDF)
0.1. Size:187K isahaya
rt3n77m.pdf 
RT3N77M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3N77M is composite transistor built with two 1.25 RT1N140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver
0.2. Size:89K chenmko
3n772gp.pdf
CHENMKO ENTERPRISE CO.,LTD3N772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.).114(2.90)* PC= 1.5 W (mounted on ceramic substrate). .307(7.80).059(1.
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