40317 Datasheet. Specs and Replacement
Type Designator: 40317
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
40317 Substitution
- BJT ⓘ Cross-Reference Search
40317 datasheet
Doc No. TT4-EA-14209 Revision. 5 Product Standards MOS FET SK8403170L SK8403170L Silicon N-channel MOS FET Unit mm 3.25 For Load-switching / For DC-DC Converter 3.05 0.22 8 7 6 5 Features Low Drain-source On-state Resistance RDS(on) typ = 3.9 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 1 2 3 4 0.3 1.0 ... See More ⇒
Detailed specifications: 40314V1, 40314V2, 40315, 40315L, 40315S, 40315V1, 40315V2, 40316, 13007, 40317L, 40317S, 40317V1, 40317V2, 40318, 40319, 40319L, 40319S
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