40317 Datasheet, Equivalent, Cross Reference Search
Type Designator: 40317
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
40317 Transistor Equivalent Substitute - Cross-Reference Search
40317 Datasheet (PDF)
0.1. Size:346K panasonic
sk840317.pdf
sk840317.pdf
Doc No. TT4-EA-14209Revision. 5Product StandardsMOS FETSK8403170LSK8403170LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 3.9 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
