40319V1 Datasheet. Specs and Replacement
Type Designator: 40319V1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO5F
40319V1 Substitution
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40319V1 datasheet
Doc No. TT4-EA-14210 Revision. 6 Product Standards MOS FET SK8403190L SK8403190L Silicon N-channel MOS FET Unit mm 3.25 For Load-switching / For DC-DC Converter 3.05 0.22 8 7 6 5 Features Low Drain-source On-state Resistance RDS(on) typ = 10 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 1 2 3 4 0.3 1.0 Ma... See More ⇒
Detailed specifications: 40317L, 40317S, 40317V1, 40317V2, 40318, 40319, 40319L, 40319S, TIP31C, 40319V2, 40320, 40320L, 40320S, 40320V1, 40320V2, 40321, 40321L
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