All Transistors. 2N25 Datasheet

 

2N25 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N25
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 9 MHz
   Forward Current Transfer Ratio (hFE), MIN: 22
   Noise Figure, dB: -
   Package: TO7

 2N25 Transistor Equivalent Substitute - Cross-Reference Search

   

2N25 Datasheet (PDF)

 ..1. Size:1372K  goford
2n25.pdf

2N25 2N25

GOFORD2N25Description Features VDSS RDS(ON) ID @10V (typ) 2A250V 2.2 Fast switching 100% avalanche tested Improved dv/dt capability TO-251TO-252 Application DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter U

 0.1. Size:267K  motorola
mtv32n25e.pdf

2N25 2N25

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTV32N25E/DDesigner's Data SheetMTV32N25ETMOS E-FET.Power Field Effect TransistorD3PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate32 AMPERES250 VOLTSThe D3PAK package has the capability of housing the largest chipRDS(on) = 0.08 OHMsize of any standard, plastic, surface mo

 0.2. Size:94K  motorola
mtw32n25e.pdf

2N25 2N25

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW32N25E/DDesigner's Data SheetMTW32N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.08 OHMenergy in

 0.3. Size:139K  motorola
mmft2n25erev0.pdf

2N25 2N25

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

 0.4. Size:143K  motorola
mmft2n25e.pdf

2N25 2N25

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

 0.5. Size:151K  motorola
mtw32n25erev2.pdf

2N25 2N25

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW32N25E/DDesigner's Data SheetMTW32N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.08 OHMenergy in

 0.6. Size:109K  international rectifier
irfu12n25d.pdf

2N25 2N25

PD - 94296AIRFR12N25DSMPS MOSFET IRFU12N25DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters250V 0.26 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

 0.7. Size:225K  international rectifier
irfr12n25dpbf irfu12n25dpbf.pdf

2N25 2N25

PD - 95353AIRFR12N25DPbFSMPS MOSFET IRFU12N25DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters250V 0.26 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa

 0.8. Size:104K  international rectifier
irfr12n25d.pdf

2N25 2N25

PD - 94296AIRFR12N25DSMPS MOSFET IRFU12N25DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters250V 0.26 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

 0.9. Size:772K  st
stl52n25m5.pdf

2N25 2N25

STL52N25M5N-channel 250 V, 0.055 , 28 A, PowerFLAT (5x6)MDmesh V Power MOSFETFeaturesRDS(on) Type VDSS ID(1)max.STL52N25M5 250 V

 0.10. Size:474K  st
stp52n25m5.pdf

2N25 2N25

STP52N25M5N-channel 250 V, 0.055 , 28 A, TO-220MDmeshTM V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP52N25M5 250 V

 0.11. Size:597K  fairchild semi
fqa62n25c.pdf

2N25 2N25

QFETFQA62N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 62A, 250V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 100 nC)planar, DMOS technology. Low Crss ( typical 63.5 pF)This advanced technology has been especially tailored to Fast s

 0.12. Size:100K  njs
2n2509.pdf

2N25

 0.13. Size:180K  ixys
ixbt2n250.pdf

2N25 2N25

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

 0.14. Size:206K  ixys
ixbh42n250.pdf

2N25 2N25

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35

 0.15. Size:175K  ixys
ixgh2n250.pdf

2N25 2N25

Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2

 0.16. Size:175K  ixys
ixgt2n250.pdf

2N25 2N25

Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2

 0.17. Size:583K  ixys
ixtk62n25.pdf

2N25 2N25

IXTK 62N25 VDSS = 250 VHigh CurrentID25 = 62 AMegaMOSTMFETRDS(on) = 35 mN-Channel Enhancement ModePreliminary Data SheetSymbol Test conditions Maximum ratingsTO-264VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1.0 M 250 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C62 ADIDM TC = 25C, pulse width

 0.18. Size:159K  ixys
ixtt82n25p ixtq82n25p ixtk82n25p.pdf

2N25 2N25

VDSS = 250VIXTT82N25PPolarTMID25 = 82AIXTQ82N25PPower MOSFET RDS(on) 38m IXTK82N25PTO-268 (IXTT)N-Channel Enhancement ModeGAvalanche RatedSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 250 VTO-3P( IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient

 0.19. Size:194K  ixys
ixth02n250 ixtv02n250s.pdf

2N25 2N25

High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient

 0.20. Size:180K  ixys
ixbh2n250.pdf

2N25 2N25

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

 0.21. Size:184K  ixys
ixta02n250hv.pdf

2N25 2N25

Advance Technical InformationHigh VoltageIXTA02N250HVVDSS = 2500VPower MOSFETID25 = 200mA RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263ABGS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 2500 VS = Source Tab = DrainVGSS

 0.22. Size:294K  ixys
ixtk82n25p ixtq82n25p ixtt82n25p.pdf

2N25 2N25

IXTK 82N25P VDSS = 250 VPolarHTTMIXTQ 82N25P ID25 = 82 APower MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25

 0.23. Size:252K  ixys
ixta42n25p ixtp42n25p ixtq42n25p.pdf

2N25 2N25

IXTA 42N25P VDSS = 250 VPolarHTTMIXTP 42N25P ID25 = 42 APower MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 250 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB)VGS Continuous 20 VTO-220 (IXTP)VGSM Transient 3

 0.24. Size:189K  utc
12n25.pdf

2N25 2N25

UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy

 0.25. Size:163K  isahaya
rt2n25m.pdf

2N25 2N25

RT2N25M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 0.26. Size:143K  samhop
sdu02n25 sdd02n25.pdf

2N25 2N25

GreenProductSDU/D02N25aS mHop Microelectronics C orp.Ver 1.1N-Channel Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.250V 2A 3.2 @ VGS=10V Suface Mount Package.GSSDU SERIES SDD SERIESTO - 252AA(D-PAK) TO - 251(I-PAK)ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)

 0.27. Size:151K  semtech
2n25550 2n25551.pdf

2N25 2N25

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)

 0.28. Size:1162K  truesemi
tsa82n25m.pdf

2N25 2N25

TSA82N25M 250V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,250V,Max.RDS(on)=35m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h

 0.29. Size:942K  truesemi
tsk82n25m.pdf

2N25 2N25

TSK82N25M 250V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,250V,Max.RDS(on)=35m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand

 0.30. Size:416K  way-on
wm02n25m.pdf

2N25 2N25

WM02N25M N-Channel MOSFET Features V = 20V, I = 2.5A DS DR

 0.31. Size:819K  cn hunteck
hga1k2n25ml.pdf

2N25 2N25

HGA1K2N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level87RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability93RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Spe

 0.32. Size:823K  cn hunteck
hgp1k2n25ml.pdf

2N25 2N25

HGP1K2N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level87RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability93RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness25 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Spe

 0.33. Size:522K  cn hmsemi
hm2n25.pdf

2N25 2N25

HM2N25N-Channel Enhancement Mode Power MOSFET Description The HM2N25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 250V,ID =2A Schematic diagram RDS(ON)

Datasheet: 2N249 , 2N2490 , 2N2491 , 2N2492 , 2N2493 , 2N2494 , 2N2495 , 2N2496 , 4124 , 2N250 , 2N2501 , 2N2509 , 2N250A , 2N251 , 2N2510 , 2N2511 , 2N2512 .

 

 
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