41501 Datasheet and Replacement
Type Designator: 41501
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
41501 Substitution
41501 Datasheet (PDF)
ptfa041501e-f.pdf

PTFA041501EPTFA041501FConfidential, Limited Internal DistributionThermally-Enhanced High Power RF LDMOS FETs150 W, 420 500 MHzDescriptionThe PTFA041501E and PTFA041501F are 150-watt LDMOS FETsPTFA041501Edesigned for ultra-linear CDMA power amplifier applications.Package H-36248-2They are available in thermally-enhanced ceramic open-cavitypackages . Manufactured with In
Datasheet: 41028 , 41038 , 41039 , 41042 , 41044 , 411 , 413 , 41500 , C3198 , 41502 , 41503 , 41504 , 41505 , 41506 , 41508 , 423 , 431 .
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