All Transistors. 41501 Datasheet

 

41501 Datasheet and Replacement


   Type Designator: 41501
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
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41501 Datasheet (PDF)

 0.1. Size:430K  infineon
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41501

PTFA041501EPTFA041501FConfidential, Limited Internal DistributionThermally-Enhanced High Power RF LDMOS FETs150 W, 420 500 MHzDescriptionThe PTFA041501E and PTFA041501F are 150-watt LDMOS FETsPTFA041501Edesigned for ultra-linear CDMA power amplifier applications.Package H-36248-2They are available in thermally-enhanced ceramic open-cavitypackages . Manufactured with In

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA1051A | AC181VII | 2SB464 | MMBT4122 | 2G344 | 2SA843 | 2N1963

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