41501 Transistor. Datasheet pdf. Equivalent
Type Designator: 41501
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
41501 Transistor Equivalent Substitute - Cross-Reference Search
41501 Datasheet PDF:
1.1. ptfa041501e-f.pdf 
Size:430K _infineon
PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs PTFA041501E designed for ultra-linear CDMA power amplifier applications. Package H-36248-2 They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineo
Datasheet: 41028 , 41038 , 41039 , 41042 , 41044 , 411 , 413 , 41500 , S9012 , 41502 , 41503 , 41504 , 41505 , 41506 , 41508 , 423 , 431 .
