41501 Datasheet. Specs and Replacement
Type Designator: 41501
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
41501 Substitution
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41501 datasheet
PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs PTFA041501E designed for ultra-linear CDMA power amplifier applications. Package H-36248-2 They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with In... See More ⇒
Detailed specifications: 41028, 41038, 41039, 41042, 41044, 411, 413, 41500, 9014, 41502, 41503, 41504, 41505, 41506, 41508, 423, 431
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