9010 Datasheet. Specs and Replacement
Type Designator: 9010
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
9010 datasheet
0.4. Size:141K nxp
pmd9010d.pdf 
PMD9010D MOSFET driver Rev. 01 20 November 2006 Product data sheet 1. Product profile 1.1 General description Two NPN transistors and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Two general-purpose transistors and one high-speed switching diode as driver Totem pole configura... See More ⇒
0.5. Size:247K vishay
irfr9010pbf.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mountable (Order as IRFR9010, VDS (V) - 50 SiHFR9010) Straight Lead Option (Order as IRFU9010, RDS(on) ( )VGS = - 10 V 0.50 SiHFU9010) Qg (Max.) (nC) 9.1 Repetitive Avalanche Ratings Qgs (nC) 3.0 Dynamic dV/dt Rating Simple Drive Requiremen... See More ⇒
0.6. Size:131K vishay
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E... See More ⇒
0.7. Size:129K vishay
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E... See More ⇒
0.8. Size:1390K vishay
sihfr9010 sihfu9010.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010) RDS(on) ( )VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt Rating Q... See More ⇒
0.9. Size:1365K vishay
irfr9010 irfu9010 sihfr9010 sihfu9010.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010) RDS(on) ( )VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt Rating Q... See More ⇒
0.10. Size:1473K cn vbsemi
irfr9010tr.pdf
IRFR9010TR www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy... See More ⇒
Detailed specifications: 7NU74, 8003BBA, 8003BBB, 8050, 80DA020D, 810BLYA, 8550, 9003, 2SA1943, 9011, 9011D, 9011E, 9011F, 9011G, 9011H, 9011I, 9012
Keywords - 9010 pdf specs
9010 cross reference
9010 equivalent finder
9010 pdf lookup
9010 substitution
9010 replacement
