9010 Datasheet, Equivalent, Cross Reference Search
Type Designator: 9010
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
9010 Transistor Equivalent Substitute - Cross-Reference Search
9010 Datasheet (PDF)
pmd9010d.pdf
PMD9010DMOSFET driverRev. 01 20 November 2006 Product data sheet1. Product profile1.1 General descriptionTwo NPN transistors and high-speed switching diode connected in totem poleconfiguration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plasticpackage.1.2 Features Two general-purpose transistors and one high-speed switching diode as driver Totem pole configura
irfr9010pbf.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order as IRFR9010,VDS (V) - 50 SiHFR9010) Straight Lead Option (Order as IRFU9010,RDS(on) ()VGS = - 10 V 0.50SiHFU9010)Qg (Max.) (nC) 9.1 Repetitive Avalanche Ratings Qgs (nC) 3.0 Dynamic dV/dt Rating Simple Drive Requiremen
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
sihfr9010 sihfu9010.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
irfr9010 irfu9010 sihfr9010 sihfu9010.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
irfr9010tr.pdf
IRFR9010TRwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: UNR221V
