Биполярный транзистор 9010
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 9010
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Ёмкость коллекторного перехода (Cc): 4.5
pf
Статический коэффициент передачи тока (hfe): 110
Корпус транзистора:
TO92
9010
Datasheet (PDF)
0.4. Size:141K nxp
pmd9010d.pdf 
PMD9010DMOSFET driverRev. 01 20 November 2006 Product data sheet1. Product profile1.1 General descriptionTwo NPN transistors and high-speed switching diode connected in totem poleconfiguration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plasticpackage.1.2 Features Two general-purpose transistors and one high-speed switching diode as driver Totem pole configura
0.5. Size:247K vishay
irfr9010pbf.pdf 
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order as IRFR9010,VDS (V) - 50 SiHFR9010) Straight Lead Option (Order as IRFU9010,RDS(on) ()VGS = - 10 V 0.50SiHFU9010)Qg (Max.) (nC) 9.1 Repetitive Avalanche Ratings Qgs (nC) 3.0 Dynamic dV/dt Rating Simple Drive Requiremen
0.6. Size:131K vishay
irfd9010pbf sihfd9010.pdf 
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
0.7. Size:129K vishay
sihfd9010 irfd9010.pdf 
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
0.8. Size:1390K vishay
sihfr9010 sihfu9010.pdf 
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
0.9. Size:1365K vishay
irfr9010 irfu9010 sihfr9010 sihfu9010.pdf 
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
0.10. Size:1473K cn vbsemi
irfr9010tr.pdf 
IRFR9010TRwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy
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