9010
 - Даташиты. Аналоги. Основные параметры
   Наименование производителя: 9010
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.5
 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50
 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6
 V
   Макcимальный постоянный ток коллектора (Ic): 0.1
 A
   Предельная температура PN-перехода (Tj): 150
 °C
   Граничная частота коэффициента передачи тока (ft): 200
 MHz
   Ёмкость коллекторного перехода (Cc): 4.5
 pf
   Статический коэффициент передачи тока (hfe): 110
		   Корпус транзистора: 
TO92
				
				  
				  Аналоги (замена) для 9010
   - 
подбор ⓘ биполярного транзистора по параметрам
 
		
9010
 Datasheet (PDF)
 0.4.  Size:141K  nxp
 pmd9010d.pdf 

PMD9010DMOSFET driverRev. 01  20 November 2006 Product data sheet1. Product profile1.1 General descriptionTwo NPN transistors and high-speed switching diode connected in totem poleconfiguration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plasticpackage.1.2 Features Two general-purpose transistors and one high-speed switching diode as driver Totem pole configura
 0.5.  Size:247K  vishay
 irfr9010pbf.pdf 

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order as IRFR9010,VDS (V) - 50 SiHFR9010) Straight Lead Option (Order as IRFU9010,RDS(on) ()VGS = - 10 V 0.50SiHFU9010)Qg (Max.) (nC) 9.1 Repetitive Avalanche Ratings Qgs (nC) 3.0 Dynamic dV/dt Rating Simple Drive Requiremen
 0.6.  Size:131K  vishay
 irfd9010pbf sihfd9010.pdf 

IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50  Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
 0.7.  Size:129K  vishay
 sihfd9010 irfd9010.pdf 

IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50  Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
 0.8.  Size:1390K  vishay
 sihfr9010 sihfu9010.pdf 

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
 0.9.  Size:1365K  vishay
 irfr9010 irfu9010 sihfr9010 sihfu9010.pdf 

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
 0.10.  Size:1473K  cn vbsemi
 irfr9010tr.pdf 

IRFR9010TRwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY  TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ)  100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy
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