9012 Datasheet and Replacement

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) 1 *Excellent hFE linearity *Complementary to UTC 9013 TO-92 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specified) PARAMETER SYMBOL RATING UN... See More ⇒

9012 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P I ,h , 9013 C C FE High PC and IC excellent hFE linearity complementary pair with 9013. / Applications Amplifier of portable rad... See More ⇒

... See More ⇒

SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units V... See More ⇒

SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter ... See More ⇒

IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mountable (Order as IRFR9012, SiHFR9012) VDS (V) - 50 Straight Lead Option (Order as IRFU9012, SiHFU9012) Available RDS(on) ( )VGS = - 10 V 0.70 Repetitive Avalanche Ratings RoHS* Qg (Max.) (nC) 9.1 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.0 Simple Drive R... See More ⇒

Technische Information / Technical Information IGBT-Module FF450R12KE4 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannun... See More ⇒

MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating ... See More ⇒

MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating ... See More ⇒

S9012-G MCC Micro Commercial Components TM S9012-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9012-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a... See More ⇒

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specifie... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD MMBT9012 PNP SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 1 2 *High total power dissipation. (625mW) SOT-23 *High collector current. (-500mA) (JEDEC TO-236) *Excellent hFE linearity *Complementary to UTC MMBT9013 ORDERING INFORMATION Pin Assignment Ordering Number Package P... See More ⇒

STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description General purpose application. Switching application. Features Excellent hFE linearity. Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06 0.1 1.27 Typ. 2.54 ... See More ⇒

S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM - 0.5 A A Emitter H 0.013 0.100 L Collector-base v... See More ⇒

S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V C... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9012 TO-92 CBE General Purpose Audio Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 500 mA Collector Power... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors TO-92 9012S TRANSISTOR (PNP) FEATURES 1. EMITTER Complementary to 9013S 2. COLLECTOR Excellent hFE linearity 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage V... See More ⇒

TRANSISTOR (PNP) 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit XXX ... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors JC T SOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter ... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2 1.2 0.5) TOP unit mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl... See More ⇒

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40 ... See More ⇒

SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ Excellent hFE Linearity. + A 2.93 0.20 B 1.30+0.20/-0.15 Complementary to KTC9013S. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q MAXIMUM RATING (Ta=25 ) ... See More ⇒

SEMICONDUCTOR KTC9012SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity. Complementary to KTC9013SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA ... See More ⇒

Transistors 2SA9012 ... See More ⇒

S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collect... See More ⇒

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 GM9013 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATIN... See More ⇒

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= -500mA Dim Min Max A 2.70 3.10 E Complementary To S9013. B 1.10 1.50 K B C 1.0 Typical Excellent HFE Linearity. D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 APPLICATIONS G H 0.02 0.1 J 0.1 Typical High Collector Current. H K 2.20 2.60 C All Dimensions in mm MAXIMUM... See More ⇒

S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Coll... See More ⇒

S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector ... See More ⇒

S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 15... See More ⇒

S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http //www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characterist... See More ⇒

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM 0.625 W (Tamb=25 ) 3. COLLECTOR Collector current ICM -0.5 A 1 2 3 Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Tj, Tstg -55 to +150... See More ⇒

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Unit mm TJ, Tst... See More ⇒

... See More ⇒

Spec. No. C305A3 Issued Date 2014.02.17 CYStech Electronics Corp. Revised Date 2014.03.11 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3 Description The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10... See More ⇒

... See More ⇒

9012M Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features PC IC ,hFE , 9013M High PC and IC, Excellent hFE linearity, complementary pair with 9013M. / Applications Amplifier of portable radio... See More ⇒

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O... See More ⇒

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 ... See More ⇒

MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C... See More ⇒

9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absol... See More ⇒

LESHAN RADIO COMPANY, LTD. PNP Epitaxial Silicon L9012 Transistor 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to L9013 TO-92 1 Excellent hFE linearity. 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbo... See More ⇒

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking ... See More ⇒

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking ... See More ⇒

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking ... See More ⇒

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking ... See More ⇒

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking ... See More ⇒

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking... See More ⇒

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking ... See More ⇒

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissip... See More ⇒

... See More ⇒

SEMICONDUCTOR FTC9012S TECHNICAL DATA X General Purpose Transistors PNP Silicon FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 ORDERING INFORMATION 1 Device Package Shipping SOT-23 FTC9012SX SOT 23 FTC9012SX 10000/Tape&Reel SOT-23 3 COLLECTOR 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 2... See More ⇒

SMD Type Transistors SMD Type IC SMD Type PNP Transistors KST9012C SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE liearity Collector Current IC=-0.5A 12 +0.05 0.95+0.1 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltag... See More ⇒

SMD Type or SMD Type TransistICs SMD Type PNP Transistors KST9012 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Excellent hFE liearity Collector Current IC=-0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Vo... See More ⇒

Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation Pc=225mW MECHANICAL DATA * Case SOT-23 Molded plastic * Epoxy UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T... See More ⇒

DC COMPONENTS CO., LTD. DMBT9012 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 3 = Collector .063(1.60) .108(0.65) .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .091(2.30) Cha... See More ⇒

... See More ⇒

... See More ⇒

S9012(3CG9012) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , h , S9013(3DG9013) C C FE Features High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE /Absolute maximum ratings(Ta=25 ) ... See More ⇒

Product specification PNP Silicon Epitaxial Planar Transistor S9012 FEATURES Pb High Collector Current.(I = -500mA C Lead-free Complementary To S9013. Excellent H Linearity. FE APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9012 2T1 SOT-23 none is for Lead Free package; G is fo... See More ⇒

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S9013. Excellent HFE Linearity. APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB... See More ⇒

R UMW UMW S9012 SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S9013 1. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO... See More ⇒

RoHS MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 1.BASE Complement to 9013G 2.EMITTER Collector Current Ic=-500mA 2.4 3.COLLECTOR 1.3 High Total Power Dissipation Pc=225mW Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO ... See More ⇒

S9012 PNP SMD Transistors FEATURES SOT 23 High Collector Current Complementary To S9013 Excellent hFE Linearity MARKING 2T1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500... See More ⇒

S9012 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 As complementary type the NPN transistor S9013 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Voltage -25 ... See More ⇒

S9012 TRANSISTOR (PNP) FEATURES SOT-23 High Collector Current Complementary To S9013 Excellent hFE Linearity 3 2 MARKING 2T1 1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA ... See More ⇒

PNP SMD Transistors Formosa MS S9012 SOT 23 FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector ... See More ⇒

S9 012 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High Collector Current. Complementary to S9013. Excellent hFE Linearity. Marking 2T1 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Po... See More ⇒

S9012 PNP Epitaxial Silicon Transistor TO-92 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.25 0.2 2 Base 1 2 3 Tj, Tstg -55 to +150 3 Collector 2.54 0.1 ... See More ⇒

S9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9013. Excellent hFE Linearity. SOT-23 Plastic Package MARKING 2T1 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -25 V Emitter Base Voltage VE... See More ⇒

www.msksemi.com S9012-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Collector Current Complementary To 1. BASE S9013-MS 2. EMITTER SOT 23 MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base... See More ⇒

MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT9012G K2 1.Base MMBT9012H K3 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collec... See More ⇒

S9012 PNP Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Excellent hFE liearity Simplified outline(SOT-23) Collector Current IC=-0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 V Collector Current to Continuous IC -500 mA Collector Power Dis... See More ⇒

... See More ⇒

Jingdao Microelectronics co.LTD S9012 General Purpose Transistor PNP Silicon FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9012 = 2T1 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO -25 Vdc ... See More ⇒

... See More ⇒

... See More ⇒

S9012 S9012 S9012 S9012 S9 0 12 TRANSISTOR(PNP) FEATURES High Collector Current SOT-23 Complementary To S9013 Excellent hFE Linearity 1 BASE 2 EMITTER MARKING 2T1 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 ... See More ⇒

Jul 2015 SEBT9012,9013,9014,9015,9016,9018 PNP Plastic-Encapsulate Transistors (9012, 9015) Revision A NPN Plastic-Encapsulate Transistors (9013, 9014,9016, 9018) Feature AM/FM Amplifier, local oscillator of FM/VHF tuner High current gain bandwidth product Applications Inverter, Interface, Driver 9012 is complementary to 9013 9014 is complementary to 9015 ... See More ⇒

S9012 S9012 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9013 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking 2T1 Maximum Ratings & Thermal Characteristics TA = 25 C un... See More ⇒

S9012 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9013 Excellent hFE linearity 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Col... See More ⇒

S9012W/SOT323 TRANSISTOR (PNP) FEATURES Complementary to S9013T Excellent h linearity FE MARKING 2T1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V -40 V CBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I Collector Current -Continuous -500 mA C P Collector Power Dissipation 300 mW C T Junc... See More ⇒

S9012T TRANSISTOR PNP FEATURES SOT-523 Complementary to S9013T Excellent hFE linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC C... See More ⇒

FHT9012-ME PNP Transistor DESCRIPTIONS SOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona... See More ⇒

... See More ⇒

S9012 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V. Collector current IC=-0.5A. ansition frequency fT>150MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol... See More ⇒

S9012 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to S9013 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol ... See More ⇒

Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @ ... See More ⇒

isc Silicon PNP Power Transistor S9012 DESCRIPTION Excellent hFE linearity Complement to NPN Type S9013 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitt... See More ⇒