All Transistors. 9012 Datasheet

 

9012 Datasheet, Equivalent, Cross Reference Search

Type Designator: 9012

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 64

Noise Figure, dB: -

Package: TO92

9012 Transistor Equivalent Substitute - Cross-Reference Search

 

9012 Datasheet (PDF)

0.1. irfr9010 irfr9012 irfu9010 irfu9012.pdf Size:550K _1

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9012

0.2. ss9012.pdf Size:35K _fairchild_semi

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SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsV

 0.3. ss9012.pdf Size:46K _samsung

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SS9012 PNP EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASSTO-92B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -40VCollector-Emitter

0.4. sihfr9012 sihfu9012.pdf Size:1234K _vishay

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IRFR9012, IRFU9012, SiHFR9012, SiHFU9012Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order as IRFR9012, SiHFR9012)VDS (V) - 50 Straight Lead Option (Order as IRFU9012, SiHFU9012) AvailableRDS(on) ()VGS = - 10 V 0.70 Repetitive Avalanche Ratings RoHS*Qg (Max.) (nC) 9.1 COMPLIANT Dynamic dV/dt RatingQgs (nC) 3.0 Simple Drive R

 0.5. 6ps09012e4dg35566.pdf Size:424K _infineon

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Technische Information / Technical InformationIGBT-ModuleFF450R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannun

0.6. s9012g s9012h s9012i.pdf Size:199K _mcc

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S9012-GMCCMicro Commercial ComponentsTMS9012-H20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S9012-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating a

0.7. mms9012-h.pdf Size:175K _mcc

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MCCMicro Commercial Components MMS9012-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS9012-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsPNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

0.8. mms9012-l.pdf Size:175K _mcc

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MCCMicro Commercial Components MMS9012-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS9012-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsPNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

0.9. mmbt9012.pdf Size:98K _utc

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UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2*High total power dissipation. (625mW) 1*High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3MARKING 12SOT-231: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specifie

0.10. 9012.pdf Size:97K _utc

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UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) 1*Excellent hFE linearity *Complementary to UTC 9013 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL RATING UN

0.11. sts9012.pdf Size:106K _auk

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STS9012SemiconductorSemiconductorPNP Silicon TransistorDescription General purpose application. Switching application.Features Excellent hFE linearity. Complementary pair with STS9013Ordering InformationType NO. Marking Package Code STS9012 STS9012 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54

0.12. s9012.pdf Size:233K _secos

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S9012PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation 11C 0.890 1.1102BasePCM : 0.3 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : - 0.5 A AEmitterH 0.013 0.100LCollector-base v

0.13. s9012t.pdf Size:89K _secos

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S9012TPNP Epitaxial Silicon TransistorRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.080.0746+0.10. 0.1 Collector-base voltage V(BR)CBO : -40 V(1.27 Typ.)1: Emitter Operating and storage junction temperature range +0.21.

0.14. cmbt9012.pdf Size:131K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR CMBT 9012PIN CONFIGURATION (PNP)SOT-231 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 35 VCollector -Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5.0 VC

0.15. cd9012.pdf Size:165K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR CD9012TO-92CBEGeneral Purpose Audio Amplifier Applications.ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 30 VCollector -Base Voltage VCBO 40 VEmitter Base Voltage VEBO 5.0 VCollector Current IC 500 mACollector Power

0.16. tp9012nnd03.pdf Size:340K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP unit: mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

0.17. s9012w.pdf Size:537K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emit

0.18. 9012s.pdf Size:552K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors TO-92 9012S TRANSISTOR (PNP) FEATURES 1. EMITTER Complementary to 9013S 2. COLLECTOR Excellent hFE linearity 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage V

0.19. ktc9012s.pdf Size:395K _kec

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SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity._A 2.93 0.20+B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P

0.20. ktc9012.pdf Size:46K _kec

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SEMICONDUCTOR KTC9012TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.Complementary to KTC9013.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25)F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBO -40

0.21. ktc9012sc.pdf Size:613K _kec

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SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA

0.22. 2sa9012.pdf Size:74K _usha

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Transistors2SA9012

0.23. s9012.pdf Size:768K _htsemi

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S901 2SOT-23 TRANSISTOR(PNP)FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA PC Collect

0.24. s9012.pdf Size:240K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9012FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.Complementary to GM9013 GM9013 MAXIMUM RATINGS (Ta=25 )MAXIMUM RATIN

0.25. s9012 sot-23.pdf Size:212K _lge

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S9012 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VIC Coll

0.26. s9012 to-92.pdf Size:245K _lge

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S9012(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VDimensions in inches and (millimeters)IC Collector

0.27. s9012lt1.pdf Size:238K _wietron

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S9012LT1PNP General Purpose Transistors3P b Lead(Pb)-Free 12SOT-23ValueVCEO -20-40-5-5003002.4417S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S-0.1-20-100 -40-5.0-100u-0.15-35-0.15 u-4.0WEITRON1/2 28-Apr-2011http://www.weitron.com.twS9012LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characterist

0.28. s9012.pdf Size:1633K _wietron

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S9012PNP General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -25 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base Voltage VEBO-5 VdcCollector Current IC-500 mAdcPCMTotal Device Dissipation T =25 C 0.625WAJunction Temperature T 15

0.29. s9012lt1.pdf Size:371K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Unit: mm TJ, Tst

0.30. s9012.pdf Size:579K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: -0.5 A 1 2 3 Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150

0.31. bta9012a3.pdf Size:319K _cystek

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Spec. No. : C305A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.03.11 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3Description The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10

0.32. s9012 sot-23.pdf Size:275K _can-sheng

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) FEATURES Complimentary to S9013 Collector current:Ic=0.5A MARKING:2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

0.33. 9012m.pdf Size:943K _blue-rocket-elect

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9012M(BR3CG9012M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features P I ,h , 9013M(BR3DG9013M)C C FEHigh PC and IC, Excellent hFE linearity, complementary pair with 9013M(BR3DG9013M). / Applications

0.34. l9012rlt1g.pdf Size:79K _lrc

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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

0.35. l9012plt1g.pdf Size:82K _lrc

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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

0.36. l9012qlt1g.pdf Size:80K _lrc

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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

0.37. l9012slt1g.pdf Size:79K _lrc

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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

0.38. l9012.pdf Size:151K _lrc

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LESHAN RADIO COMPANY, LTD.PNP Epitaxial Silicon L9012Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to L9013 TO-921 Excellent hFE linearity.1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbo

0.39. h9012.pdf Size:129K _shantou-huashan

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P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissip

0.40. s9012h.pdf Size:215K _china

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*********************************************************************************** S 9012 PNP EPITAXIAL SILICON TRANSISTOR: Ta=25) - VCBO -40 V - VCEO -20 V - VEBO -5 V

0.41. ftc9012s.pdf Size:96K _first_silicon

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SEMICONDUCTORFTC9012STECHNICAL DATAXGeneral Purpose TransistorsPNP SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9012SX SOT 23 FTC9012SX10000/Tape&ReelSOT-233COLLECTOR1MAXIMUM RATINGS BASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 2

0.42. kst9012c.pdf Size:137K _kexin

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SMD Type TransistorsSMD Type ICSMD TypePNP TransistorsKST9012CSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesExcellent hFE liearityCollector Current :IC=-0.5A 12+0.050.95+0.1-0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 VCollector - Emitter Voltag

0.43. kst9012.pdf Size:925K _kexin

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SMD Type orSMD Type TransistICsSMD TypePNP TransistorsKST9012SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE liearityCollector Current :IC=-0.5A 1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 VCollector - Emitter Volta

0.44. s9012lt.pdf Size:939K _bruckewell

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Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation: Pc=225mW MECHANICAL DATA * Case: SOT-23 Molded plastic * Epoxy: UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T

0.45. dmbt9012.pdf Size:173K _dc_components

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DC COMPONENTS CO., LTD.DMBT9012DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

0.46. 3cg9012.pdf Size:217K _foshan

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S9012(3CG9012) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , S9013(3DG9013) C C FEFeatures: High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE/Absolute maximum ratings(Ta=25)

0.47. mmbt9012lt1.pdf Size:135K _wej

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RoHS MMBT9012LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 9013G2.EMITTER Collector Current :Ic=-500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO

0.48. s9012.pdf Size:201K _inchange_semiconductor

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isc Silicon PNP Power Transistor S9012DESCRIPTIONExcellent hFE linearityComplement to NPN Type S9013Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -25 VCEOV Emitt

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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