9012 datasheet и подбор замены

 ..1. Size:97K  utc
 9012.pdf 

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) 1 *Excellent hFE linearity *Complementary to UTC 9013 TO-92 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specified) PARAMETER SYMBOL RATING UN

 ..2. Size:1065K  blue-rocket-elect
 9012.pdf 

9012 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P I ,h , 9013 C C FE High PC and IC excellent hFE linearity complementary pair with 9013. / Applications Amplifier of portable rad

 0.1. Size:550K  1
 irfr9010 irfr9012 irfu9010 irfu9012.pdf 

 0.2. Size:35K  fairchild semi
 ss9012.pdf 

SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units V

 0.3. Size:46K  samsung
 ss9012.pdf 

SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter

 0.4. Size:1234K  vishay
 sihfr9012 sihfu9012.pdf 

IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mountable (Order as IRFR9012, SiHFR9012) VDS (V) - 50 Straight Lead Option (Order as IRFU9012, SiHFU9012) Available RDS(on) ( )VGS = - 10 V 0.70 Repetitive Avalanche Ratings RoHS* Qg (Max.) (nC) 9.1 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.0 Simple Drive R

 0.5. Size:424K  infineon
 6ps09012e4dg35566.pdf 

Technische Information / Technical Information IGBT-Module FF450R12KE4 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannun

 0.6. Size:175K  mcc
 mms9012-l.pdf 

MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

 0.7. Size:175K  mcc
 mms9012-h.pdf 

MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

 0.8. Size:199K  mcc
 s9012g s9012h s9012i.pdf 

S9012-G MCC Micro Commercial Components TM S9012-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9012-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a

 0.9. Size:98K  utc
 mmbt9012.pdf 

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specifie

 0.10. Size:175K  utc
 mmbt9012g-d mmbt9012g-e mmbt9012g-f mmbt9012g-g mmbt9012g-h mmbt9012g-i.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBT9012 PNP SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 1 2 *High total power dissipation. (625mW) SOT-23 *High collector current. (-500mA) (JEDEC TO-236) *Excellent hFE linearity *Complementary to UTC MMBT9013 ORDERING INFORMATION Pin Assignment Ordering Number Package P

 0.11. Size:106K  auk
 sts9012.pdf 

STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description General purpose application. Switching application. Features Excellent hFE linearity. Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06 0.1 1.27 Typ. 2.54

 0.12. Size:233K  secos
 s9012.pdf 

S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM - 0.5 A A Emitter H 0.013 0.100 L Collector-base v

 0.13. Size:89K  secos
 s9012t.pdf 

S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.

 0.14. Size:131K  cdil
 cmbt9012.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V C

 0.15. Size:165K  cdil
 cd9012.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9012 TO-92 CBE General Purpose Audio Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 500 mA Collector Power

 0.16. Size:552K  jiangsu
 9012s.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors TO-92 9012S TRANSISTOR (PNP) FEATURES 1. EMITTER Complementary to 9013S 2. COLLECTOR Excellent hFE linearity 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage V

 0.17. Size:248K  jiangsu
 s9012.pdf 

TRANSISTOR (PNP) 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit XXX

 0.18. Size:1116K  jiangsu
 s9012w.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors JC T SOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter

 0.19. Size:340K  jiangsu
 tp9012nnd03.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2 1.2 0.5) TOP unit mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

 0.20. Size:360K  kec
 ktc9012.pdf 

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40

 0.21. Size:353K  kec
 ktc9012s.pdf 

SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ Excellent hFE Linearity. + A 2.93 0.20 B 1.30+0.20/-0.15 Complementary to KTC9013S. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q MAXIMUM RATING (Ta=25 )

 0.22. Size:613K  kec
 ktc9012sc.pdf 

SEMICONDUCTOR KTC9012SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity. Complementary to KTC9013SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA

 0.23. Size:74K  usha
 2sa9012.pdf 

Transistors 2SA9012

 0.24. Size:984K  htsemi
 s9012.pdf 

S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collect

 0.25. Size:240K  gsme
 s9012.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 GM9013 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATIN

 0.26. Size:1498K  lge
 s9012.pdf 

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= -500mA Dim Min Max A 2.70 3.10 E Complementary To S9013. B 1.10 1.50 K B C 1.0 Typical Excellent HFE Linearity. D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 APPLICATIONS G H 0.02 0.1 J 0.1 Typical High Collector Current. H K 2.20 2.60 C All Dimensions in mm MAXIMUM

 0.27. Size:212K  lge
 s9012 sot-23.pdf 

S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Coll

 0.28. Size:245K  lge
 s9012 to-92.pdf 

S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector

 0.29. Size:1633K  wietron
 s9012.pdf 

S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 15

 0.30. Size:238K  wietron
 s9012lt1.pdf 

S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http //www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characterist

 0.31. Size:579K  shenzhen
 s9012.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM 0.625 W (Tamb=25 ) 3. COLLECTOR Collector current ICM -0.5 A 1 2 3 Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Tj, Tstg -55 to +150

 0.32. Size:371K  shenzhen
 s9012lt1.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Unit mm TJ, Tst

 0.33. Size:561K  jilin sino
 3cg9012.pdf 

 0.34. Size:319K  cystek
 bta9012a3.pdf 

Spec. No. C305A3 Issued Date 2014.02.17 CYStech Electronics Corp. Revised Date 2014.03.11 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3 Description The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10

 0.35. Size:275K  can-sheng
 s9012 sot-23.pdf 

 0.36. Size:954K  blue-rocket-elect
 9012m.pdf 

9012M Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features PC IC ,hFE , 9013M High PC and IC, Excellent hFE linearity, complementary pair with 9013M. / Applications Amplifier of portable radio

 0.37. Size:173K  semtech
 mmbt9012g mmbt9012h.pdf 

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O

 0.38. Size:120K  semtech
 mmbt9012h-h35.pdf 

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150

 0.39. Size:120K  semtech
 mmbt9012h-h23.pdf 

MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C

 0.40. Size:170K  semtech
 9012g 9012h 9012i.pdf 

9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absol

 0.41. Size:151K  lrc
 l9012.pdf 

LESHAN RADIO COMPANY, LTD. PNP Epitaxial Silicon L9012 Transistor 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to L9013 TO-92 1 Excellent hFE linearity. 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbo

 0.42. Size:75K  lrc
 l9012plt1g l9012qlt1g l9012rlt1g l9012slt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 0.43. Size:82K  lrc
 l9012plt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 0.44. Size:79K  lrc
 l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g l9012rlt3g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 0.45. Size:75K  lrc
 l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 0.46. Size:80K  lrc
 l9012qlt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 0.47. Size:79K  lrc
 l9012slt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 0.48. Size:79K  lrc
 l9012rlt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 0.49. Size:129K  shantou-huashan
 h9012.pdf 

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissip

 0.50. Size:215K  china
 s9012h.pdf 

 0.51. Size:96K  first silicon
 ftc9012s.pdf 

SEMICONDUCTOR FTC9012S TECHNICAL DATA X General Purpose Transistors PNP Silicon FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 ORDERING INFORMATION 1 Device Package Shipping SOT-23 FTC9012SX SOT 23 FTC9012SX 10000/Tape&Reel SOT-23 3 COLLECTOR 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 2

 0.52. Size:137K  kexin
 kst9012c.pdf 

SMD Type Transistors SMD Type IC SMD Type PNP Transistors KST9012C SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE liearity Collector Current IC=-0.5A 12 +0.05 0.95+0.1 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltag

 0.53. Size:911K  kexin
 kst9012.pdf 

SMD Type or SMD Type TransistICs SMD Type PNP Transistors KST9012 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Excellent hFE liearity Collector Current IC=-0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Vo

 0.54. Size:939K  bruckewell
 s9012lt.pdf 

Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation Pc=225mW MECHANICAL DATA * Case SOT-23 Molded plastic * Epoxy UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T

 0.55. Size:173K  dc components
 dmbt9012.pdf 

DC COMPONENTS CO., LTD. DMBT9012 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 3 = Collector .063(1.60) .108(0.65) .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .091(2.30) Cha

 0.56. Size:302K  feihonltd
 c9012a.pdf 

 0.57. Size:318K  feihonltd
 c9012b.pdf 

 0.58. Size:217K  foshan
 3cg9012.pdf 

S9012(3CG9012) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , h , S9013(3DG9013) C C FE Features High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE /Absolute maximum ratings(Ta=25 )

 0.59. Size:174K  galaxy
 s9012.pdf 

Product specification PNP Silicon Epitaxial Planar Transistor S9012 FEATURES Pb High Collector Current.(I = -500mA C Lead-free Complementary To S9013. Excellent H Linearity. FE APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9012 2T1 SOT-23 none is for Lead Free package; G is fo

 0.60. Size:303K  slkor
 s9012-l s9012-h s9012-j.pdf 

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S9013. Excellent HFE Linearity. APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB

 0.61. Size:574K  umw-ic
 s9012l s9012h s9012j.pdf 

R UMW UMW S9012 SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S9013 1. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

 0.62. Size:135K  wej
 mmbt9012lt1.pdf 

RoHS MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 1.BASE Complement to 9013G 2.EMITTER Collector Current Ic=-500mA 2.4 3.COLLECTOR 1.3 High Total Power Dissipation Pc=225mW Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO

 0.63. Size:1508K  anbon
 s9012.pdf 

S9012 PNP SMD Transistors FEATURES SOT 23 High Collector Current Complementary To S9013 Excellent hFE Linearity MARKING 2T1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500

 0.64. Size:844K  born
 s9012.pdf 

S9012 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 As complementary type the NPN transistor S9013 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Voltage -25

 0.65. Size:1528K  fuxinsemi
 s9012.pdf 

S9012 TRANSISTOR (PNP) FEATURES SOT-23 High Collector Current Complementary To S9013 Excellent hFE Linearity 3 2 MARKING 2T1 1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA

 0.66. Size:1098K  fms
 s9012.pdf 

PNP SMD Transistors Formosa MS S9012 SOT 23 FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector

 0.67. Size:1873K  high diode
 s9012.pdf 

S9 012 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High Collector Current. Complementary to S9013. Excellent hFE Linearity. Marking 2T1 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Po

 0.68. Size:414K  jsmsemi
 s9012.pdf 

S9012 PNP Epitaxial Silicon Transistor TO-92 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.25 0.2 2 Base 1 2 3 Tj, Tstg -55 to +150 3 Collector 2.54 0.1

 0.69. Size:600K  mdd
 s9012.pdf 

S9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9013. Excellent hFE Linearity. SOT-23 Plastic Package MARKING 2T1 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -25 V Emitter Base Voltage VE

 0.70. Size:3960K  msksemi
 s9012-ms.pdf 

www.msksemi.com S9012-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Collector Current Complementary To 1. BASE S9013-MS 2. EMITTER SOT 23 MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base

 0.71. Size:1743K  pjsemi
 mmbt9012g mmbt9012h.pdf 

MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT9012G K2 1.Base MMBT9012H K3 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collec

 0.72. Size:1158K  cn evvo
 s9012 s9012-l s9012-h s9012-j.pdf 

S9012 PNP Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Excellent hFE liearity Simplified outline(SOT-23) Collector Current IC=-0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 V Collector Current to Continuous IC -500 mA Collector Power Dis

 0.73. Size:825K  cn salltech
 s9012-l s9012-h s9012-j.pdf 

 0.74. Size:786K  cn shandong jingdao microelectronics
 s9012-l s9012-h s9012-j.pdf 

Jingdao Microelectronics co.LTD S9012 General Purpose Transistor PNP Silicon FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9012 = 2T1 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO -25 Vdc

 0.75. Size:576K  cn shikues
 s9012l s9012h.pdf 

 0.76. Size:910K  cn yongyutai
 s9012.pdf 

 0.77. Size:1852K  cn twgmc
 s9012l 29012h.pdf 

S9012 S9012 S9012 S9012 S9 0 12 TRANSISTOR(PNP) FEATURES High Collector Current SOT-23 Complementary To S9013 Excellent hFE Linearity 1 BASE 2 EMITTER MARKING 2T1 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5

 0.78. Size:1148K  cn sino-ic
 sebt9012 sebt9013 sebt9014 sebt9015 sebt9016 sebt9018.pdf 

Jul 2015 SEBT9012,9013,9014,9015,9016,9018 PNP Plastic-Encapsulate Transistors (9012, 9015) Revision A NPN Plastic-Encapsulate Transistors (9013, 9014,9016, 9018) Feature AM/FM Amplifier, local oscillator of FM/VHF tuner High current gain bandwidth product Applications Inverter, Interface, Driver 9012 is complementary to 9013 9014 is complementary to 9015

 0.79. Size:536K  cn doeshare
 s9012.pdf 

S9012 S9012 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9013 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking 2T1 Maximum Ratings & Thermal Characteristics TA = 25 C un

 0.80. Size:324K  cn cbi
 s9012.pdf 

S9012 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9013 Excellent hFE linearity 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Col

 0.81. Size:427K  cn cbi
 s9012w.pdf 

S9012W/SOT323 TRANSISTOR (PNP) FEATURES Complementary to S9013T Excellent h linearity FE MARKING 2T1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V -40 V CBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I Collector Current -Continuous -500 mA C P Collector Power Dissipation 300 mW C T Junc

 0.82. Size:386K  cn cbi
 s9012t.pdf 

S9012T TRANSISTOR PNP FEATURES SOT-523 Complementary to S9013T Excellent hFE linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC C

 0.83. Size:380K  cn fh
 fht9012-me.pdf 

FHT9012-ME PNP Transistor DESCRIPTIONS SOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona

 0.84. Size:274K  cn fosan
 s9012.pdf 

 0.85. Size:1983K  cn goodwork
 s9012.pdf 

S9012 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V. Collector current IC=-0.5A. ansition frequency fT>150MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol

 0.86. Size:689K  cn hottech
 s9012.pdf 

S9012 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to S9013 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

 0.87. Size:377K  cn xch
 s9012.pdf 

Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @

 0.88. Size:201K  inchange semiconductor
 s9012.pdf 

isc Silicon PNP Power Transistor S9012 DESCRIPTION Excellent hFE linearity Complement to NPN Type S9013 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitt