All Transistors. 9014 Datasheet

 

9014 Datasheet, Equivalent, Cross Reference Search

Type Designator: 9014

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.315 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 64

Noise Figure, dB: -

Package: TO92

9014 Transistor Equivalent Substitute - Cross-Reference Search

 

9014 Datasheet (PDF)

0.1. 9014m hj6a hj6b hj6c hj6d.pdf Size:704K _1

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9014M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P ,h , 9015M C FEHigh PC and hFE, excellent hFE linearity, complementary pair with 9015M. / Applications low freq

0.2. sfu9014 sfr9014.pdf Size:229K _fairchild_semi

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SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

 0.3. sfr9014tf.pdf Size:226K _fairchild_semi

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SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

0.4. ss9014.pdf Size:38K _fairchild_semi

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SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO

 0.5. sfm9014tf.pdf Size:256K _fairchild_semi

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SFM9014Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.8 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = -60V2 Lower RDS(ON) : 0.362 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

0.6. irfr9014pbf irfu9014pbf.pdf Size:1864K _international_rectifier

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PD- 95383AIRFR9014PbFIRFU9014PbF Lead-Free12/07/04Document Number: 91277 www.vishay.com1IRFR/U9014PbFDocument Number: 91277 www.vishay.com2IRFR/U9014PbFDocument Number: 91277 www.vishay.com3IRFR/U9014PbFDocument Number: 91277 www.vishay.com4IRFR/U9014PbFDocument Number: 91277 www.vishay.com5IRFR/U9014PbFDocument Number: 91277 www.vishay.com6I

0.7. irfl9014.pdf Size:222K _international_rectifier

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PD - 90863AIRFL9014HEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 0.50 Fast SwitchingG Ease of ParallelingID = -1.8ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, ruggedized device

0.8. irfd9014.pdf Size:177K _international_rectifier

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0.9. irfl9014pbf.pdf Size:256K _international_rectifier

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PD - 95153IRFL9014PbFHEXFET Power MOSFETl Surface Mountl Available in Tape & Reel DVDSS = -60Vl Dynamic dv/dt Ratingl Repetitive Avalanche Ratedl P-ChannelRDS(on) = 0.50l Fast SwitchingGl Ease of Parallelingl Lead-FreeID = -1.8ASDescriptinThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitchin

0.10. irfd9014pbf.pdf Size:1819K _international_rectifier

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PD- 95925IRFD9014PbF Lead-Free10/27/04Document Number: 91136 www.vishay.com1IRFD9014PbFDocument Number: 91136 www.vishay.com2IRFD9014PbFDocument Number: 91136 www.vishay.com3IRFD9014PbFDocument Number: 91136 www.vishay.com4IRFD9014PbFDocument Number: 91136 www.vishay.com5IRFD9014PbFDocument Number: 91136 www.vishay.com6IRFD9014PbFPeak Diode R

0.11. irfr9014.pdf Size:177K _international_rectifier

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0.12. sfr9014.pdf Size:495K _samsung

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Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

0.13. ss9014.pdf Size:47K _samsung

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SS9014 NPN EPITAXIAL SILICON TRANSISTORPRE-AMPLIFIER, LOW LEVEL & LOW NOISETO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 45VEmitter-Base Voltage VEBO 5mACollector Current IC

0.14. sfm9014.pdf Size:949K _samsung

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Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V2 Lower RDS(ON) : 0.362 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

0.15. sihfl9014.pdf Size:169K _vishay

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IRFL9014, SiHFL9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and ReelQg (Max.) (nC) 12 Dynamic dV/dt RatingQgs (nC) 3.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 5.1 Fast SwitchingConfiguration Single

0.16. irfr9014 irfu9014 sihfr9014 sihfu9014 2.pdf Size:1891K _vishay

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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60 Definition Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 0.50 Repetitive Avalanche RatedQg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014)Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape

0.17. irfl9014 sihfl9014.pdf Size:168K _vishay

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IRFL9014, SiHFL9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and ReelQg (Max.) (nC) 12 Dynamic dV/dt RatingQgs (nC) 3.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 5.1 Fast SwitchingConfiguration Single

0.18. irfd9014pbf sihfd9014.pdf Size:1751K _vishay

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IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin

0.19. irfr9014 irfu9014 sihfr9014 sihfu9014.pdf Size:2009K _vishay

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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* Surface Mount (IRFR9014/SiHFR9014)COMPLIANTQg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014)Qgs (nC) 3.8 Available in Tape and ReelQgd (nC) 5.1

0.20. irfd9014 sihfd9014.pdf Size:1750K _vishay

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IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin

0.21. irfr9014pbf irfu9014pbf sihfr9014 sihfu9014.pdf Size:1117K _vishay

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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated Surface Mount (IRFR9014, SiHFR9014)RDS(on) ()VGS = - 10 V 0.50 Straight Lead (IRFU9014, SiHFU9014)Qg (Max.) (nC) 12 Available in Tape and ReelQgs (nC) 3.8 P-Channel Fast Switch

0.22. s9014b s9014c s9014d.pdf Size:219K _mcc

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MCCS9014-BMicro Commercial ComponentsTM20736 Marilla Street ChatsworthS9014-CMicro Commercial ComponentsCA 91311Phone: (818) 701-4933S9014-DFax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.1A Collector-base Voltage 50VTransistors Operating and

0.23. mms9014-l.pdf Size:179K _mcc

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0.24. mms9014-h.pdf Size:179K _mcc

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0.25. mmbt9014.pdf Size:125K _utc

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UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT9014G-x-AE3-R MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel MA

0.26. 9014.pdf Size:63K _utc

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UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015 *Pb-free plating product number: 9014L ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 39014-x-T92-B 9014L-x-T92-B TO-92

0.27. sts9014.pdf Size:207K _auk

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STS9014NPN Silicon TransistorDescription PIN Connection General purpose application C Switching application Features B Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) Low noise : NF=10dB(Max.) at f=1KHz E Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92A

0.28. s9014w.pdf Size:263K _secos

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S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W AL33Top View C B11 22K EPACKAGING INFORMATION Weight: 0.0074 g DCollectorH JF G3 Millimeter MillimeterREF. REF. Min. Max. Min. Max.MARKING CODE 1 A 1.

0.29. s9014t.pdf Size:130K _secos

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S9014TNPN SiliconElektronische BauelementePre-Amplifier, Low Level & Low NoiseRoHS Compliant Product A suffix of "-C" specifies halogen & lead-freeTO-92FEATURES4.550.2 3.50.2Power dissipation PCM : 0.4 WCollector currentICM : 0.1 ACollector-base voltageV(BR)CBO : 50 V0.43+0.080.0746+0.10. 0.1Operating & storage junction temperature(1.27

0.30. s9014.pdf Size:253K _secos

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S9014NPN SiliconElektronische Bauelemente Pre-Amplifier, Low Level & Low NoiseRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation11C 0.890 1.1102 BasePCM : 0.2 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : 0.1 A AEmitterH 0.013 0.100

0.31. cd9014.pdf Size:176K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CD9014TO-92CBEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 50 VCollector -Base Voltage VCBO 50 VEmitter Base Voltage VEBO 5.0 VCollector Current IC 100 mACollector Power Dissipation PC 625 mWOperating And Storage J

0.32. cmbt9014.pdf Size:128K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CMBT9014PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 30 VCollector -Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5.0 VCo

0.33. tp9014nnd03.pdf Size:287K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low

0.34. ktc9014.pdf Size:349K _kec

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SEMICONDUCTOR KTC9014TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9015. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATI

0.35. ktc9014a.pdf Size:343K _kec

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SEMICONDUCTOR KTC9014ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9015A. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RA

0.36. ktc9014sc.pdf Size:651K _kec

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SEMICONDUCTOR KTC9014SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Complementary to KTC9015SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 80 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltag

0.37. ktc9014s.pdf Size:396K _kec

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SEMICONDUCTOR KTC9014STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity_A 2.93 0.20+B 1.30+0.20/-0.15: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).C 1.30 MAX2Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Complementary to KTC9015S.1G 1.90

0.38. 2sc9014.pdf Size:76K _usha

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Transistors2SC9014

0.39. s9014w.pdf Size:458K _htsemi

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S901 4WTRANSISTOR(NPN)SOT323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 100 mA P Collector Power Dissi

0.40. s9014.pdf Size:821K _htsemi

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S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

0.41. s9014.pdf Size:241K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9014FEATURESFEATURES FEATURESExcellent HFE Linearity HFE HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)High HFE HFEHFE=200700Low Noise NF=1dB(Typ.),10dB(Max.).Comple

0.42. s9014 sot-23.pdf Size:198K _lge

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S9014 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A

0.43. s9014 to-92.pdf Size:190K _lge

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S9014(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters)VEBO

0.44. s9014lt1.pdf Size:191K _wietron

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S9014LT1312SOT-23ValueVCEO 45505.01002251.8556S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T0.14550100100u0.1400.1 u3.0WEITRON 1/ 28-Apr-2011http://www.weitron.com.twS9014LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current GainhFE 100

0.45. s9014.pdf Size:824K _wietron

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S9014NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 45 VdcCollector-Base Voltage VCBO 50VdcEmitter-Base Voltage VEBO5.0 VdcCollector Current IC100 mAdcPD 0.4Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55 to +150Stor

0.46. 9014qlt1 9014rlt1 9014slt1 9014tlt1.pdf Size:305K _willas

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FM120-M WILLAS9014xLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HNPN Silicon Low profile surface mounted application in order to o

0.47. he9014.pdf Size:57K _hsmc

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Spec. No. : HE6102HI-SINCERITYIssued Date : 1992.08.25Revised Date : 2005.02.04MICROELECTRONICS CORP.Page No. : 1/5HE9014NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE9014 is designed for use in pre-amplifier of low level and low noise.TO-92Features High Total Power Dissipation (PD: 450mW) Complementary to HE9015 High hFE and Good LinearityAbsolute Maxim

0.48. s9014lt1.pdf Size:588K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN FEATURES High total power dissipation.(pc=0.2w) Complementary to S9015LT1 MARKING: L6 J6 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitt

0.49. s9014.pdf Size:347K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25) Collector current ICM: 0.1 A 1 2 3 Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

0.50. btc9014a3.pdf Size:143K _cystek

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Spec. No. : C202A3 Issued Date : 2008.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1 / 4 General Purpose NPN Epitaxial Planar Transistor BTC9014A3Description The BTC9014A3 is designed for use in pre-amplifier of low level and low noise. Complementary to BTA9015A3. Pb-free package Symbol Outline BTC9014A3 TO-92 BBase CCollector EEmi

0.51. s9014 sot-23.pdf Size:317K _can-sheng

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) FEATURES Complimentary to S9015 MARKING:J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

0.52. s9014.pdf Size:280K _can-sheng

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TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsFEATURESHigh total power dissipation.(PC=0.45W)TO-92High hFE and good linearityComplementary to S9015MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS1.EMITTERSymbol Parameter

0.53. 9014m.pdf Size:680K _blue-rocket-elect

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9014M(BR3DG9014M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P ,h , 9015M(BR3CG9015M)C FEHigh PC and hFE, excellent hFE linearity, complementary pair with 9015M(BR3CG9015M). / Applications

0.54. 9014t.pdf Size:463K _blue-rocket-elect

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9014T(BR3DG9014T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features P ,h , 9015T(BR3CG9015T) C FEHigh PC and hFE excellent hFE linearity, complementary pair with 9015T(BR3CG9015T). / Applications

0.55. 9014w.pdf Size:658K _blue-rocket-elect

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9014W(BR3DG9014W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features P ,h , 9015W(BR3CG9015W)C FEHigh PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W). / Applications

0.56. pj2n9014.pdf Size:100K _promax-johnton

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PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE High total power dissipation (PT=450mW) TO-92 SOT-23 High h and good linearity FE Complementary to PJ2N9015 ABSOLUTE MAXIMUM RATINGS (Ta= 25 C) Rating Symbol Value Uint Pin : 1. Emitter Pin : 1. Base 2. Base Collector Base Voltage V 50 V 2.Emitter CBO3. Collector 3.Collector

0.57. l9014slt1g.pdf Size:98K _lrc

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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9014QLT1GFEATURE Complementary to L9014.Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INF

0.58. l9014tlt1g.pdf Size:99K _lrc

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9014

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Complementary to L9014.L9014QLT1G We declare that the material of product compliance with RoHS requirements.Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9014QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING IN

0.59. l9014.pdf Size:127K _lrc

9014
9014

LESHAN RADIO COMPANY, LTD.NPN Epitaxial Silicon L9014TransistorPre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to L9015TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collecto

0.60. l9014rlt1g.pdf Size:99K _lrc

9014
9014

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements.Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING IN

0.61. l9014qlt1g.pdf Size:105K _lrc

9014
9014

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATUREL9014QLT1G Complementary to L9014.Series We declare that the material of product compliance with RoHS requirements.S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING IN

0.62. h9014.pdf Size:138K _shantou-huashan

9014
9014

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9014 PRE-AMPLIFIERLOW LEVEL & LOW NOISE ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

0.63. h9014.pdf Size:143K _china

9014
9014

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9014 PRE-AMPLIFIERLOW LEVEL & LOW NOISE ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

0.64. kst9014-d.pdf Size:1021K _kexin

9014
9014

SMD Type TransistorsSMD TypeNPN TransistorsKST9014-DSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.1A1 2+0.050.95+0.1-0.1 0.1 -0.01Complementary to KST9015-D1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-E

0.65. kst9014.pdf Size:925K _kexin

9014
9014

SMD Type TransistorsSMD TypeNPN TransistorsKST9014SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.1A1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 45 VEmit

0.66. dmbt9014.pdf Size:157K _dc_components

9014
9014

DC COMPONENTS CO., LTD.DMBT9014DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in pre-amplifier of low level and low noise.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).

0.67. gsts9014lt1.pdf Size:221K _globaltech_semi

9014
9014

GSTS9014LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 45V amplifier and switch. Collector Current : 100mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTS9014LT1F SOT-23 Q 14Q

0.68. 3dg9014.pdf Size:245K _lzg

9014
9014

S9014(3DG9014) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency, low noise amplifier. :P ,h , S9015(3CG9015) C FEFeatures: High P and h excellent h linearity, complementary pair with S9015(3CG9015). C FE FE/Absolute maximum ratings(Ta=25)

0.69. pt23t9014.pdf Size:125K _prisemi

9014
9014

PT23T9014 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

0.70. stc9014.pdf Size:62K _suntac

9014
9014

STC9014NPN Silicon TransistorAudio Frequency Amplifier & High Frequency OSC. Complement to STC9015 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz (TYP) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C

0.71. mmbt9014lt1.pdf Size:136K _wej

9014
9014

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-233PRF-AMPLIFIER,LOW LEVEL&LOW NOISE1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:VCE=45V1.1.BASE High Totalpower Dissipation Pc=225mW2.EMITTER High life And Good Linearity2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacterist

0.72. 2sc9014.pdf Size:222K _inchange_semiconductor

9014
9014

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC9014DESCRIPTIONHigh total power dissipationHigh hFE and good linearityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Coll

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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