9014 datasheet, аналоги, параметры транзистора

..1. Size:63K utc
9014.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015 *Pb-free plating product number 9014L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 9014-x-T92-B 9014L-x-T92-B TO-92

..2. Size:1063K blue-rocket-elect
9014.pdf pdf_icon

9014 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features P ,h , 9015 C FE High PC and hFE excellent hFE linearity, complementary pair with 9015. / Applications Low frequen

0.1. Size:704K 1
9014m hj6a hj6b hj6c hj6d.pdf pdf_icon

9014M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P ,h , 9015M C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M. / Applications low freq

0.2. Size:1864K international rectifier
irfr9014pbf irfu9014pbf.pdf pdf_icon

PD- 95383A IRFR9014PbF IRFU9014PbF Lead-Free 12/07/04 Document Number 91277 www.vishay.com 1 IRFR/U9014PbF Document Number 91277 www.vishay.com 2 IRFR/U9014PbF Document Number 91277 www.vishay.com 3 IRFR/U9014PbF Document Number 91277 www.vishay.com 4 IRFR/U9014PbF Document Number 91277 www.vishay.com 5 IRFR/U9014PbF Document Number 91277 www.vishay.com 6 I

0.3. Size:256K international rectifier
irfl9014pbf.pdf pdf_icon

PD - 95153 IRFL9014PbF HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel D VDSS = -60V l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel RDS(on) = 0.50 l Fast Switching G l Ease of Paralleling l Lead-Free ID = -1.8A S Descripti n Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switchin

0.4. Size:222K international rectifier
irfl9014.pdf pdf_icon

PD - 90863A IRFL9014 HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 0.50 Fast Switching G Ease of Paralleling ID = -1.8A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device

0.5. Size:1819K international rectifier
irfd9014pbf.pdf pdf_icon

PD- 95925 IRFD9014PbF Lead-Free 10/27/04 Document Number 91136 www.vishay.com 1 IRFD9014PbF Document Number 91136 www.vishay.com 2 IRFD9014PbF Document Number 91136 www.vishay.com 3 IRFD9014PbF Document Number 91136 www.vishay.com 4 IRFD9014PbF Document Number 91136 www.vishay.com 5 IRFD9014PbF Document Number 91136 www.vishay.com 6 IRFD9014PbF Peak Diode R

0.6. Size:177K international rectifier
irfr9014.pdf pdf_icon

0.7. Size:177K international rectifier
irfd9014.pdf pdf_icon

0.8. Size:38K fairchild semi
ss9014.pdf pdf_icon

SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO

0.9. Size:256K fairchild semi
sfm9014tf.pdf pdf_icon

SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.8 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A(Max.) @ VDS = -60V 2 Lower RDS(ON) 0.362 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

0.10. Size:229K fairchild semi
sfu9014 sfr9014.pdf pdf_icon

SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -5.3 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max

0.11. Size:226K fairchild semi
sfr9014tf.pdf pdf_icon

SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -5.3 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max

0.12. Size:47K samsung
ss9014.pdf pdf_icon

SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC

0.13. Size:949K samsung
sfm9014.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -60V 2 Lower RDS(ON) 0.362 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

0.14. Size:495K samsung
sfr9014.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -60V Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

0.15. Size:1751K vishay
irfd9014pbf sihfd9014.pdf pdf_icon

IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin

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irfr9014pbf irfu9014pbf sihfr9014 sihfu9014.pdf pdf_icon

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Surface Mount (IRFR9014, SiHFR9014) RDS(on) ( )VGS = - 10 V 0.50 Straight Lead (IRFU9014, SiHFU9014) Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 3.8 P-Channel Fast Switch

0.17. Size:1750K vishay
irfd9014 sihfd9014.pdf pdf_icon

IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin

0.18. Size:164K vishay
sqp90142e.pdf pdf_icon

SQP90142E www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES TO-220AB TrenchFET power MOSFET Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S S D G D Top View PRODUCT SUMMARY G VDS (V) 200 RD

0.19. Size:150K vishay
sup90142e.pdf pdf_icon

SUP90142E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES TO-220AB ThunderFET power MOSFET Tuned for the lowest RDS - Qoss FOM Maximum 175 C junction temperature 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S S D G Top View APPLICATIONS D Power suppl

0.20. Size:169K vishay
sihfl9014.pdf pdf_icon

IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) ( )VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single

0.21. Size:1891K vishay
irfr9014 irfu9014 sihfr9014 sihfu9014 2.pdf pdf_icon

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 0.50 Repetitive Avalanche Rated Qg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014) Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape

0.22. Size:168K vishay
irfl9014 sihfl9014.pdf pdf_icon

IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) ( )VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single

0.23. Size:172K vishay
sqm90142e.pdf pdf_icon

SQM90142E www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES TrenchFET power MOSFET TO-263 Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S S D D G G Top View D PRODUCT SUMMARY G VDS (V) 200

0.24. Size:2009K vishay
irfr9014 irfu9014 sihfr9014 sihfu9014.pdf pdf_icon

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* Surface Mount (IRFR9014/SiHFR9014) COMPLIANT Qg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014) Qgs (nC) 3.8 Available in Tape and Reel Qgd (nC) 5.1

0.25. Size:219K mcc
s9014b s9014c s9014d.pdf pdf_icon

MCC S9014-B Micro Commercial Components TM 20736 Marilla Street Chatsworth S9014-C Micro Commercial Components CA 91311 Phone (818) 701-4933 S9014-D Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.1A Collector-base Voltage 50V Transistors Operating and

0.26. Size:495K mcc
mms9014.pdf pdf_icon

MMS9014 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-Encapsulate Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Transistor Operating Junction Tempera

0.27. Size:179K mcc
mms9014-h.pdf pdf_icon

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mms9014-l.pdf pdf_icon

0.29. Size:172K utc
mmbt9014.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. (450mW) 1 * Excellent hFE Linearity. 2 * Complementary to UTC MMBT9015 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel Note Pin

0.30. Size:207K auk
sts9014.pdf pdf_icon

STS9014 NPN Silicon Transistor Description PIN Connection General purpose application C Switching application Features B Excellent hFE linearity hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) Low noise NF=10dB(Max.) at f=1KHz E Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92 A

0.31. Size:130K secos
s9014t.pdf pdf_icon

S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55 0.2 3.5 0.2 Power dissipation PCM 0.4 W Collector current ICM 0.1 A Collector-base voltage V(BR)CBO 50 V 0.43+0.08 0.07 46+0.1 0. 0.1 Operating & storage junction temperature (1.27

0.32. Size:263K secos
s9014w.pdf pdf_icon

S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W A L 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION Weight 0.0074 g D Collector H J F G 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.

0.33. Size:253K secos
s9014.pdf pdf_icon

S9014 NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM 0.1 A A Emitter H 0.013 0.100

0.34. Size:128K cdil
cmbt9014.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Co

0.35. Size:176K cdil
cd9014.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9014 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage J

0.36. Size:931K jiangsu
s9014w.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR (NPN) SOT 323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO

0.37. Size:287K jiangsu
tp9014nnd03.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low

0.38. Size:1222K jiangsu
mmdt9014.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT9014 DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015) Ideal for Medium Power Amplification and Switching MARKING TGL6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-

0.39. Size:778K jiangsu
s9014.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9014 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO VCEO Collector-Emitter Voltage 45 V V Emitter-Base Voltage 5 V

0.40. Size:354K kec
ktc9014s.pdf pdf_icon

SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Excellent hFE Linearity B 1.30+0.20/-0.15 hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Noise NF=1dB(Typ.) at f=1kHz. E 2.40+0.30/-0.20 1 G 1.90 Complementary to KTC9

0.41. Size:651K kec
ktc9014sc.pdf pdf_icon

SEMICONDUCTOR KTC9014SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Complementary to KTC9015SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltag

0.42. Size:343K kec
ktc9014a.pdf pdf_icon

SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9015A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RA

0.43. Size:113K kec
ktc9014.pdf pdf_icon

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2sc9014.pdf pdf_icon

Transistors 2SC9014

0.45. Size:458K htsemi
s9014w.pdf pdf_icon

S901 4W TRANSISTOR(NPN) SOT 323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 100 mA P Collector Power Dissi

0.46. Size:1202K htsemi
s9014.pdf pdf_icon

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 unless otherwise noted) MAXIMUM RATINGS (TA=25 Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

0.47. Size:241K gsme
s9014.pdf pdf_icon

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9014 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE HFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High HFE HFE HFE=200 700 Low Noise NF=1dB(Typ.),10dB(Max.). Comple

0.48. Size:1521K lge
s9014.pdf pdf_icon

S9014 Silicon Epitaxial Planar Transistor FEATURES A SOT-23 Complementary To S9015. Dim Min Max A 2.70 3.10 E Excellent HFE Linearity. B 1.10 1.50 K B C 1.0 Typical Power dissipation.(PC=0.2W) D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 G H 0.02 0.1 APPLICATIONS J 0.1 Typical H Per-Amplifier low level & low noise. K 2.20 2.60 C All Dimensions in mm MAXIMUM

0.49. Size:198K lge
s9014 sot-23.pdf pdf_icon

S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A

0.50. Size:190K lge
s9014 to-92.pdf pdf_icon

S9014(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO

0.51. Size:824K wietron
s9014.pdf pdf_icon

S9014 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Stor

0.52. Size:191K wietron
s9014lt1.pdf pdf_icon

S9014LT1 3 1 2 SOT-23 Value V CEO 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T 0.1 45 50 100 100 u 0.1 40 0.1 u 3.0 WEITRON 1/ 28-Apr-2011 http //www.weitron.com.tw S9014LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 100

0.53. Size:305K willas
9014qlt1 9014rlt1 9014slt1 9014tlt1.pdf pdf_icon

FM120-M WILLAS 9014xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H NPN Silicon Low profile surface mounted application in order to o

0.54. Size:57K hsmc
he9014.pdf pdf_icon

Spec. No. HE6102 HI-SINCERITY Issued Date 1992.08.25 Revised Date 2005.02.04 MICROELECTRONICS CORP. Page No. 1/5 HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9014 is designed for use in pre-amplifier of low level and low noise. TO-92 Features High Total Power Dissipation (PD 450mW) Complementary to HE9015 High hFE and Good Linearity Absolute Maxim

0.55. Size:347K shenzhen
s9014.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM 0.4 W (Tamb=25 ) Collector current ICM 0.1 A 1 2 3 Collector-base voltage V(BR)CBO 50 V Operating and storage junction temperature range TJ, Tstg -55 to +150

0.56. Size:588K shenzhen
s9014lt1.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN FEATURES High total power dissipation.(pc=0.2w) Complementary to S9015LT1 MARKING L6 J6 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitt

0.57. Size:551K jilin sino
s9014.pdf pdf_icon

NPN NPN EPITAXIAL SILICON TRANSISTOR R S9014 MAIN CHARACTERISTICS Package I 100mA C V 45V CEO P (SOT-23) 200mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit SO

0.58. Size:143K cystek
btc9014a3.pdf pdf_icon

Spec. No. C202A3 Issued Date 2008.01.16 CYStech Electronics Corp. Revised Date Page No. 1 / 4 General Purpose NPN Epitaxial Planar Transistor BTC9014A3 Description The BTC9014A3 is designed for use in pre-amplifier of low level and low noise. Complementary to BTA9015A3. Pb-free package Symbol Outline BTC9014A3 TO-92 B Base C Collector E Emi

0.59. Size:280K can-sheng
s9014.pdf pdf_icon

TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES High total power dissipation.(PC=0.45W) TO-92 High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 1.EMITTER Symbol Parameter

0.60. Size:317K can-sheng
s9014 sot-23.pdf pdf_icon

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) FEATURES Complimentary to S9015 MARKING J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

0.61. Size:463K blue-rocket-elect
9014t.pdf pdf_icon

0.62. Size:705K blue-rocket-elect
9014m.pdf pdf_icon

9014M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P ,h , 9015M C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M. / Applications low freq

0.63. Size:658K blue-rocket-elect
9014w.pdf pdf_icon

0.64. Size:66K semtech
mmbt9014b mmbt9014c mmbt9014d.pdf pdf_icon

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA

0.65. Size:167K semtech
9014a 9014b 9014c 9014d.pdf pdf_icon

9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor 9015 is recommended. On special request, these transistors can be 1. Emitter 2. Base 3. Collector manufactured in different pin configurations. TO-92

0.66. Size:78K semtech
mmbt9014c1.pdf pdf_icon

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO

0.67. Size:100K promax-johnton
pj2n9014.pdf pdf_icon

PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE High total power dissipation (PT=450mW) TO-92 SOT-23 High h and good linearity FE Complementary to PJ2N9015 ABSOLUTE MAXIMUM RATINGS (Ta= 25 C) Rating Symbol Value Uint Pin 1. Emitter Pin 1. Base 2. Base Collector Base Voltage V 50 V 2.Emitter CBO 3. Collector 3.Collector

0.68. Size:99K lrc
l9014tlt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

0.69. Size:98K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

0.70. Size:105K lrc
l9014qlt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE L9014QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

0.71. Size:98K lrc
l9014slt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

0.72. Size:99K lrc
l9014rlt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

0.73. Size:98K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

0.74. Size:127K lrc
l9014.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. NPN Epitaxial Silicon L9014 Transistor Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to L9015 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collecto

0.75. Size:138K shantou-huashan
h9014.pdf pdf_icon

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9014 PRE-AMPLIFIER LOW LEVEL & LOW NOISE ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation

0.76. Size:143K china
h9014.pdf pdf_icon

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9014 PRE-AMPLIFIER LOW LEVEL & LOW NOISE ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation

0.77. Size:1021K kexin
kst9014-d.pdf pdf_icon

SMD Type Transistors SMD Type NPN Transistors KST9014-D SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current IC=0.1A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to KST9015-D 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-E

0.78. Size:925K kexin
kst9014.pdf pdf_icon

SMD Type Transistors SMD Type NPN Transistors KST9014 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current IC=0.1A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emit

0.79. Size:157K dc components
dmbt9014.pdf pdf_icon

DC COMPONENTS CO., LTD. DMBT9014 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in pre-amplifier of low level and low noise. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .

0.80. Size:177K galaxy
s9014.pdf pdf_icon

Product specification Silicon Epitaxial Planar Transistor S9014 FEATURES Pb Complementary To S9015. Lead-free Excellent H Linearity. FE Power dissipation.(P =0.2W) C APPLICATIONS Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9014 J6 SOT-23 none is for Lead Free package; G is for

0.81. Size:221K globaltech semi
gsts9014lt1.pdf pdf_icon

GSTS9014LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 45V amplifier and switch. Collector Current 100mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTS9014LT1F SOT-23 Q 14Q

0.82. Size:245K lzg
3dg9014.pdf pdf_icon

0.83. Size:125K prisemi
pt23t9014.pdf pdf_icon

PT23T9014 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements Pure tin plating 7 17 um Pin flatness 3mil Structu

0.84. Size:1090K slkor
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S9014W www.slkormicro.com 1 S9014W www.slkormicro.com 2

0.85. Size:331K slkor
s9014l s9014h.pdf pdf_icon

S9014 NPN Silicon Epitaxial Planar Transistor FEATURES Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) APPLICATIONS Per-Amplifier low level & low noise. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VE

0.86. Size:62K suntac
stc9014.pdf pdf_icon

STC9014 NPN Silicon Transistor Audio Frequency Amplifier & High Frequency OSC. Complement to STC9015 Collector-Base Voltage VCBO=60V High Current Gain Bandwidth Product fT=300MHz (TYP) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C

0.87. Size:347K umw-ic
s9014l s9014h.pdf pdf_icon

R UMW UMW S9014 SOT-23 Plastic-Encapsulate Transistors SOT-23 S9014 TRANSISTOR (NPN) FEATURES 1. BASE Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

0.88. Size:136K wej
mmbt9014lt1.pdf pdf_icon

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current Ic=100mA 2 Collector-Emiller Voltage VCE=45V 1. 1.BASE High Totalpower Dissipation Pc=225mW 2.EMITTER High life And Good Linearity 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characterist

0.89. Size:904K anbon
s9014.pdf pdf_icon

S9014 NPN SMD Transistor Package outline Features Collector current. (100mA) SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0.055 (1.40) 0.027 (0.69) 0.047 (1.20) 0.014 (0.35) Case Molded plastic, SOT-23 0.104 (2.64) 0.083 (2.10) Terminals

0.90. Size:1639K born
s9014.pdf pdf_icon

S9014 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features As complementary type the PNP transistor S9015 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V 1. BASE VCEO Collector-Emitter Voltage 4

0.91. Size:3183K fuxinsemi
s9014.pdf pdf_icon

S9014 General Purpose Transistors NPN Silicon FEATURES High Collector Current. SOT-23 Complementary to S9015. Excellent hFE Linearity. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Di

0.92. Size:438K fms
s9014.pdf pdf_icon

NPN SMD Transistor Formosa MS S9014 General Purpose Transistors NPN Silicon Package outline Features SOT-23 Collector current. (100mA) Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0.055 (1.40) 0.027 (0.69) 0.047 (1.20) 0.014 (0.35) Case Molded plasti

0.93. Size:2012K high diode
s9014.pdf pdf_icon

S9 014 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complementary to S9015 Marking J6 Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V C V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C B E R JA Thermal Resistance From Junctio

0.94. Size:1207K jsmsemi
s9014.pdf pdf_icon

S9014 Silicon Epitaxial Planar Transistor FEATURES Complementary to S9015 Excellent h linearity FE Power dissipation (P = 0.2W) C APPLICATIONS Per-Amplifier low level & low noise SOT-23 MAXIMUM RATING @ T =25 unless otherwise specified A Symbol Parameter Value Units Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage

0.95. Size:1278K mdd
s9014.pdf pdf_icon

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 unless otherwise noted) MAXIMUM RATINGS (TA=25 Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

0.96. Size:4373K msksemi
s9014-ms.pdf pdf_icon

www.msksemi.com S9014-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to S9015-MS 1. BASE MARKING J6 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector

0.97. Size:1200K cn evvo
s9014 s9014-l s9014-h.pdf pdf_icon

S9014 NPN Transistors 3 2 1.Base Features 2.Emitter Excellent hFE linearity 1 3.Collector Collector Current IC=0.1A Simplified outline(SOT-23) Complementary to S9015 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.1 A Collector

0.98. Size:920K cn salltech
s9014-l s9014-h.pdf pdf_icon

0.99. Size:778K cn shandong jingdao microelectronics
s9014-l s9014-h.pdf pdf_icon

Jingdao Microelectronics co.LTD S9014 General Purpose Transistor NPN Silicon FEATURES Complementary to S9015 SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9014 = J6 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage

0.100. Size:1989K cn puolop
s9014-l s9014-h.pdf pdf_icon

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING J6 unless otherwise noted) MAXIMUM RATINGS (TA=25 Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W

0.101. Size:573K cn shikues
s9014.pdf pdf_icon

0.102. Size:895K cn shikues
s9014t-l s9014t-h.pdf pdf_icon

S9014T SOT-523 Plastic-Encapsulate Transistors TRANSISTOR (NPN) S9014T SOT 523 FEATURES Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Col

0.103. Size:471K cn yfw
s9014 s9014-l s9014-h.pdf pdf_icon

S9014 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter Excellent hFE linearity 1 3.Collector Collector Current IC=0.1A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.1 A Collector Power Dissipat

0.104. Size:1705K cn yongyutai
s9014.pdf pdf_icon

S9014 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to S9015 Collector Current Ic=100mA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Power D

0.105. Size:1709K cn twgmc
s9014.pdf pdf_icon

0.106. Size:1148K cn sino-ic
sebt9012 sebt9013 sebt9014 sebt9015 sebt9016 sebt9018.pdf pdf_icon

Jul 2015 SEBT9012,9013,9014,9015,9016,9018 PNP Plastic-Encapsulate Transistors (9012, 9015) Revision A NPN Plastic-Encapsulate Transistors (9013, 9014,9016, 9018) Feature AM/FM Amplifier, local oscillator of FM/VHF tuner High current gain bandwidth product Applications Inverter, Interface, Driver 9012 is complementary to 9013 9014 is complementary to 9015

0.107. Size:803K cn vbsemi
irfu9014pbf.pdf pdf_icon

IRFU9014PBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)

0.108. Size:1520K cn vbsemi
irfl9014trpbf.pdf pdf_icon

IRFL9014TRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Pa

0.109. Size:1473K cn vbsemi
irfr9014tr.pdf pdf_icon

IRFR9014TR www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

0.110. Size:318K cn yangzhou yangjie elec
s9014l s9014h.pdf pdf_icon

RoHS RoHS COMPLIANT COMPLIANT S9014 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking J6 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 50 Collector-Emitter Voltage V

0.111. Size:933K cn doeshare
s9014.pdf pdf_icon

S9014 S9014 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9015 Power Dissipation of 200mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking J6 Maximum Ratings & Thermal Characteristics TA = 25 C unles

0.112. Size:891K cn cbi
s9014w.pdf pdf_icon

SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT 323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 1

0.113. Size:316K cn cbi
s9014.pdf pdf_icon

S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1 BASE 2 EMITTER 3 COLLECTOR MARKING J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 0.2 W

0.114. Size:1293K cn cbi
mmdt9014dw.pdf pdf_icon

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) 6 FEATURES 5 4 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 ) DW 1 2 Ideal for Medium Power Amplification and Switching 3 MARKING TGL6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltag

0.115. Size:90K cn fh
fht9014.pdf pdf_icon

General Purpose Transistors General Purpose Transistors FHT9014 DESCRIPTION & FEATURES SOT-23 Excellent hFE Linearity hFE hFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High hFE hFE=70 700 Low Noise NF=1dB (Typ.),10dB(Max.) Complementary to FHT9015 FHT9015 PIN ASSIGNMENT PIN NAME PIN NUMBER

0.116. Size:416K cn fh
fht9014-me.pdf pdf_icon

FHT9014-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona

0.117. Size:971K cn fosan
s9014.pdf pdf_icon

0.118. Size:2015K cn goodwork
s9014.pdf pdf_icon

S9014 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 45Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=45V. Collector current IC=0.1A. ansition frequency fT>150MHz @ Tr IC=10mAdc, VCE=5Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 C Terminals Solde

0.119. Size:645K cn hottech
s9014.pdf pdf_icon

S9014 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to S9015 Excellent h Linearity FE Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base V

0.120. Size:545K cn idchip
s9014.pdf pdf_icon

NPN S9014 S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1 BASE 2 EMITTER 3 COLLECTOR MARKING J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Curren

0.121. Size:777K cn xch
s9014b s9014c s9014d.pdf pdf_icon

GENERAL PURPOSE TRANSISTORS NPN SILICON Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @ T = 25 C un

0.122. Size:251K cn haohai electr
hmbt9014l hmbt9014h.pdf pdf_icon

HMBT9014 NPN-TRANSISTOR NPN, 150mA, 50V NPN NPN EPITAXIAL PLANAR TRANSISTOR SMD HMBT9014 HMBT9014LT1 NPN, BEC Excellent hFE linearity General Purpose Transistors Low noise Complementary to HMBT9015 Transistor Polarity NPN S9014 Transistor pinout BEC M

0.123. Size:222K inchange semiconductor
2sc9014.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC9014 DESCRIPTION High total power dissipation High hFE and good linearity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO V Coll

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