All Transistors. 9015 Datasheet

 

9015 Transistor. Datasheet pdf. Equivalent

Type Designator: 9015

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.315 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 64

Noise Figure, dB: -

Package: TO92

9015 Transistor Equivalent Substitute - Cross-Reference Search

9015 Datasheet (PDF)

1.1. tp9015nnd03.pdf Size:305K _update

9015
9015

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2×1.2×0.5) TOP PNP Epitaxial Silicon Transistor unit: mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois

1.2. s9015b_s9015c_s9015d.pdf Size:192K _update

9015
9015

S9015-B MCC Micro Commercial Components TM S9015-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9015-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.45Watts(Tamb=25OC) of Power Dissipation. PNP Silicon • Collector-current -0.1A • Collector-base Voltage -50V Transistors • Operating

1.3. ktc9015sc.pdf Size:643K _update

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9015

SEMICONDUCTOR KTC9015SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). ·Complementary to KTC9014SC. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO -70 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO Emitter-Base Vo

1.4. ss9015.pdf Size:41K _fairchild_semi

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9015

SS9015 Low Frequency, Low Noise Amplifier Complement to SS9014 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation

1.5. ss9015.pdf Size:59K _samsung

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9015

SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 Complement to SS9014 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperat

1.6. 9015.pdf Size:68K _utc

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9015

UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9014 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 9015L-x-T92-B 9015G-x-T92-B TO-92 E B C Tape Box 9015

1.7. mmbt9015.pdf Size:94K _utc

9015
9015

UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC MMBT9014 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT9015L-x-AE3-R MMBT9015G-x-AE3-R SOT-23 E B C Tape Reel MARKING

1.8. sts9015.pdf Size:97K _auk

9015
9015

STS9015 Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) • Low noise : NF = 10dB(Max.) • Complementary pair with STS9014 Ordering Information Type NO. Marking Package Code STS9015 STS9015 TO-92 Outline Dimensions unit :

1.9. s9015t.pdf Size:597K _secos

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9015

S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity CLASSIFICATION OF hFE Product-Rank S9015T-A S9015T-B S9015T-C S9015T-D Range 60~150 100

1.10. s9015.pdf Size:228K _secos

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9015

S9015 PNP Silicon Elektronische Bauelemente Low Frequency, Low Noise Amplifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : -0.1 A A Emitter H 0.013 0.100 L Col

1.11. cmbt9015.pdf Size:130K _cdil

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9015

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Coll

1.12. cd9015.pdf Size:165K _cdil

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9015

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9015 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage Junc

1.13. ktc9015a.pdf Size:344K _kec

9015

SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9014A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RAT

1.14. ktc9015.pdf Size:27K _kec

9015

SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9014. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=

1.15. ktc9015s.pdf Size:396K _kec

9015
9015

SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.93 0.20 + B 1.30+0.20/-0.15 : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). C 1.30 MAX 2 Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Complementary to KTC9014S. 1 G 1.90 H

1.16. 2sa9015.pdf Size:86K _usha

9015
9015

Transistors 2SA9015

1.17. s9015w.pdf Size:456K _htsemi

9015

S901 5W TRANSISTOR(PNP) SOT–323 FEATURES ? Small Surface Mount Package ? High DC Current Gain MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Dissipation 2

1.18. s9015.pdf Size:642K _htsemi

9015
9015

S901 5 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Jun

1.19. s9015.pdf Size:241K _gsme

9015
9015

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9015 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:hFE(0.1mA)/ hFE(2mA)=0.95(Typ.) Low Noise ???:NF=1dB(Typ.),10db(Max.). Complementary to GM9014 ? GM9014 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS (Ta=25?) ?????

1.20. s9015_to-92.pdf Size:176K _lge

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9015

S9015(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Dimensi

1.21. s9015_sot-23.pdf Size:185K _lge

9015
9015

S9015 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A

1.22. s9015.pdf Size:921K _wietron

9015
9015

S9015 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Stor

1.23. s9015lt1.pdf Size:203K _wietron

9015
9015

S9015LT1 PNP 3 1 2 SOT-23 Value V CEO -45 -50 -5 -100 225 1.8 556 S9015QLT1=15Q S9015RLT1=15R S9015SLT1=15S -0.1 -45 -40 -100 -5.0 -100 u -0.1 -40 -0.1 u -3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9015LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE

1.24. he9015.pdf Size:53K _hsmc

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9015

Spec. No. : HE6101 HI-SINCERITY Issued Date : 1992.08.25 Revised Date : 2005.02.04 MICROELECTRONICS CORP. Page No. : 1/5 HE9015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9015 is designed for use in pre-amplifier of low level and low noise. TO-92 Features • High Total Power Dissipation (PD: 450mW) • Complementary to HE9014 • High hFE and Good Linearity Absolute Maximum

1.25. s9015_sot-23.pdf Size:257K _can-sheng

9015
9015

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING:M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Vo

1.26. 9015w.pdf Size:772K _blue-rocket-elect

9015
9015

9015W(BR3CG9015W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-323 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9014W(BR3DG9014W)互补。 C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014W(BR3DG9014W). 用途 / Applications 用于低电平、低噪声的

1.27. 9015m.pdf Size:442K _blue-rocket-elect

9015
9015

9015M(BR3CG9015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9014M(BR3DG9014M)互补。 C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014M(BR3DG9014M). 用途 / Applications 用于低电平、低噪声的前

1.28. l9015qlt1g.pdf Size:155K _lrc

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9015

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE L9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDER

1.29. l9015rlt1g.pdf Size:156K _lrc

9015
9015

Rev.O 1/4 LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Complementary to L9014. L9015QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9015QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKI

1.30. l9015slt1g.pdf Size:153K _lrc

9015
9015

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE L9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND O

1.31. a9015.pdf Size:529K _fgx

9015

风光欣技术资料 A9015 —PNP silicon — ■■APPLICATION:General purpose application, Switching application. ■■MAXIMUM RATINGS(Ta=25℃) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150

1.32. h9015.pdf Size:546K _shantou-huashan

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9015

P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9015 █ APPLICATIONS LOW FREQUENCY,LOW NOISE AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯⋯⋯

1.33. ss9015.pdf Size:239K _kexin

9015
9015

DIP Type e Transistors SMD Typ PNP Transistors SS9015 Unit:mm TO-92 4.8 ± 0.3 3.8 ± 0.3 Features Complementary to SS9014 0.60 Max 0.45 ± 0.1 0.5 2 1 3 1.Emitter 2.Base 1.27 2.54 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current

1.34. kst9015.pdf Size:971K _kexin

9015
9015

SMD Type Transistors SMD Type PNP Transistors KST9015 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Complementary to KST9014 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -

1.35. kst9015-d.pdf Size:1068K _kexin

9015
9015

SMD Type Transistors SMD Type PNP Transistors KST9015-D SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE linearity Collector Current :IC=-0.1A 1 2 Complementary to KST9014-D +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collect

1.36. s9015.pdf Size:166K _shenzhen-tuofeng-semi

9015
9015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES 2. BASE High total power dissipation.(PC=0.45W) High hFE and good linearity 3. COLLECTOR Complementary to S9014 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vol

1.37. s9015lt1.pdf Size:271K _shenzhen-tuofeng-semi

9015
9015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25℃) Collector current 2. 4 ICM: -0.1 A 1. 3 Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to

Datasheet: 9013G , 9013H , 9014 , 9014D , 9014E , 9014F , 9014G , 9014H , BC546 , 9015A , 9015B , 9015C , 9015D , 9016 , 9016D , 9016E , 9016F .

 


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