9015 - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9014 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 9015L-x-T92-B 9015G-x-T92-B TO-92 E B C Tape Box 9

9015 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P ,h , 9014 C FE High PC, excellent hFE linearity, complementary pair with 9014. / Applications Low frequency, low

9015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features P ,h , 9014M C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014M. / Applications low freque

SS9015 Low Frequency, Low Noise Amplifier Complement to SS9014 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissi

SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 Complement to SS9014 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Tem

MMS9015 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Silicon Plastic- Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Encapsulate Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Transistor Operating Junction Temperature Range -55

S9015-B MCC Micro Commercial Components TM S9015-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9015-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current -0.1A Collector-base Voltage -50V Transistors Operating

UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES *High total power dissipation. (450mW) 1 *Excellent hFE linearity. 2 *Complementary to UTC MMBT9014 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9015G-x-AE3-R SOT-23 E B C Tape Reel Note Pin As

STS9015 Semiconductor Semiconductor PNP Silicon Transistor Description General purpose application. Switching application. Features Excellent hFE linearity hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) Low noise NF = 10dB(Max.) Complementary pair with STS9014 Ordering Information Type NO. Marking Package Code STS9015 STS9015 TO-92 Outline Dimensions uni

S9015 PNP Silicon Elektronische Bauelemente Low Frequency, Low Noise Amplifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM -0.1 A A Emitter H 0.013 0.100

S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity CLASSIFICATION OF hFE Product-Rank S9015T-A S9015T-B S9015T-C S9015T-D Range 60 150

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9015 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage J

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9015W TRANSISTOR (PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9015 TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING M6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT9015 TRANSISTOR (PNP) FEATURES Complementary to MMDT9014 MARKING TGM6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -5 V EBO I Collector Curr

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2 1.2 0.5) TOP PNP Epitaxial Silicon Transistor unit mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois

SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Noise NF=1dB(Typ.) at f=1kHz. E 2.40+0.30/-0.20 Complementary to KTC9014S. 1

SEMICONDUCTOR KTC9015SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). Complementary to KTC9014SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -70 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO Emitter-Base Vo

SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9014A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM

Transistors 2SA9015

S901 5W TRANSISTOR(PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Diss

S901 5 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W T

S9015 Silicon Epitaxial Planar Transistor FEATURES A SOT-23 Complementary To S9014. Dim Min Max A 2.70 3.10 E Excellent HFE Linearity. B 1.10 1.50 K B C 1.0 Typical Power dissipation.(PC=0.2W) D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 G H 0.02 0.1 APPLICATIONS J 0.1 Typical H K 2.20 2.60 Low frequency , low noise amplifier. C All Dimensions in mm ORDERING

S9015 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.

S9015(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Di

S9015LT1 PNP 3 1 2 SOT-23 Value V CEO -45 -50 -5 -100 225 1.8 556 S9015QLT1=15Q S9015RLT1=15R S9015SLT1=15S -0.1 -45 -40 -100 -5.0 -100 u -0.1 -40 -0.1 u -3.0 WEITRON 1/ 28-Apr-2011 http //www.weitron.com.tw S9015LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain

S9015 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 S

Spec. No. HE6101 HI-SINCERITY Issued Date 1992.08.25 Revised Date 2005.02.04 MICROELECTRONICS CORP. Page No. 1/5 HE9015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9015 is designed for use in pre-amplifier of low level and low noise. TO-92 Features High Total Power Dissipation (PD 450mW) Complementary to HE9014 High hFE and Good Linearity Absolute Maxim

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM 0.2 W (Tamb=25 ) Collector current 2. 4 ICM -0.1 A 1. 3 Collector-base voltage V(BR)CBO -50 V Operating and storage junction temperature range TJ, Tstg -55 to

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES 2. BASE High total power dissipation.(PC=0.45W) High hFE and good linearity 3. COLLECTOR Complementary to S9014 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vol

PNP PNP EPITAXIAL SILICON TRANSISTOR R S9015 MAIN CHARACTERISTICS Package I 100mA C V 45V CEO P (SOT-23) 200mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit SO

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

9015W(BR3CG9015W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features P ,h , 9014W(BR3DG9014W) C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014W(BR3DG9014W). / Applications

9015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features P ,h , 9014M C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014M. / Applications low freque

MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 45 V

9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor 9014 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collec

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE L9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND O

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE L9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDER

Rev.O 1/4 LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Complementary to L9014. L9015QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9015QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKI

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE L9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND O

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE L9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDER

SMD Type Transistors SMD Type PNP Transistors KST9015-D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE linearity Collector Current IC=-0.1A 1 2 Complementary to KST9014-D +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collect

DIP Type e Transistors SMD Typ PNP Transistors SS9015 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Complementary to SS9014 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Base 1.27 2.54 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current

SMD Type Transistors SMD Type PNP Transistors KST9015 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Complementary to KST9014 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -

DC COMPONENTS CO., LTD. DMBT9015 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in pre-amplifier of low level and low noise. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .

Product specification Silicon Epitaxial Planar Transistor S9015 FEATURES Pb Complementary To S9014. Lead-free Excellent H Linearity. FE Power dissipation.(P =0.2W) C APPLICATIONS Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9015 M6 SOT-23 none is for Lead Free package; G is for

S9015 TRANSISTOR PNP TRANSISTOR PNP TRANSISTOR PNP TRANSISTOR PNP SOT-23 FEATURES Complementary to S9014 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Pow

S9015W TRANSISTOR(PNP) FEATURES Small Surface Mount Package SOT 323 High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -50 V 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipatio

R UMW UMW S9015 SOT-23 Plastic-Encapsulate Transistors SOT-23 S9015 TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING M6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -C

RoHS MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current Ic=-100mA 2 Collector-Emiller Voltage VCE=-45V 1. 1.BASE 2.EMITTER 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage V V

S9015 SOT-23 PNP Plastic-Encapsulate Transistors FEATURES SOT-23 Complementary to S9014 MARKING M6 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Po

S9015 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 As complementary type the NPN transistor S9014 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V 1. BASE VCEO Collector-Emitter Voltage -

S9015 FEATURES High Collector Current. SOT-23 Complementary to S9014. Excellent hFE Linearity. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -45 V CEO VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA P Collector Power Dissipation 200 mW C R Thermal Resistance

S9 015 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complementary to S9014 Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C R JA Thermal Resistance From Junction To Ambient 625 /W

S9015 NPN Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PC=300mW) APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V

S9015 SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) SOT-23 FEATURES Complementary To S9014 1. BASE MARKING M6 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -45 V CEO VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10

www.msksemi.com S9015-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014-MS 2. EMITTER SOT 23 MARKING M6 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -5 V EBO I Collec

MMBT9015 PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT9014 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 50 V CBO Collector Emitter Voltage

S9015 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Complementary to S9014 Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature

Jingdao Microelectronics co.LTD S9015 General Purpose Transistor PNP Silicon FEATURES Complementary to S9014 SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9015 = M6 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO -45 Vdc Collector Base Voltage VCBO -50 Vdc Emitter Base Voltag

S901 5 TRANSISTOR(PNP) SOT-23 FEATURES Complementary to S9014 MARKING M6 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj J

S9015 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Complementary to S9014 Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Te

S9015 SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -50 V VCEO Collector-Emitter Voltage -

S9015 TRANSISTOR (PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Dissipati

S9015 S9015 S9015 TRANSISTOR(PNP) FEATURES SOT-23 Complementary to S9014 1 BASE 2 EMITTER 3 COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0

Jul 2015 SEBT9012,9013,9014,9015,9016,9018 PNP Plastic-Encapsulate Transistors (9012, 9015) Revision A NPN Plastic-Encapsulate Transistors (9013, 9014,9016, 9018) Feature AM/FM Amplifier, local oscillator of FM/VHF tuner High current gain bandwidth product Applications Inverter, Interface, Driver 9012 is complementary to 9013 9014 is complementary to 9015

RoHS RoHS COMPLIANT COMPLIANT S9015 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking M6 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -50 Collector-Emitter Voltage V

S9015 S9015 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9014 Power Dissipation of 200mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking M6 Maximum Ratings & Thermal Characteristics TA = 25 C unl

TRANSISTOR(PNP) FEATURES Small Surface Mount Package SOT 323 High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER VCEO Collector-Emitter Voltage -45 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V I Collector Current -100 mA C P Collector Power Dissipation 200

S9015 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9014 1 BASE 2 EMITTER 3 COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W

FHT9015-ME PNP Transistor DESCRIPTIONS SOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S9015 FEATURES Excellent H Linearity H h (-0.1mA)/ h (-2mA)=0.95(Typ.) FE FE FE FE Low Noise NF=1dB(Typ.),10db(Max.). Complementary to S9014 S9014 MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol Rating Unit

S9015 General Purpose Transistor PNP Silicon FEATURES Complementary to S9015 e A M D e e a C E L1 L HE 1.BASE 2.EMITTER SOT-23 mechanical data 3.COLLECTOR UNIT A C D E HE e M L L1 a Marking max 1.1 0.15 1.4 3.0 2.6 0.5 1.95 0.0 0.55 0.36 mm (ref) (ref) min 0.9 0.08 1.2 2.8 2.2 0.3 1.7 0.15 Type number Marking code max 43 6 55 118 102 20 77 0.0 S9015 M6 22 14 m

S9015 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to S9014 Excellent h Linearity FE Surface Mount device MECHANICAL DATA SOT-23 Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit V Collector-Base

PNP S9015 S9015 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9014 1 BASE 2 EMITTER 3 COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Cu

S901 5 Features Complementary to S9014 MARKING M6 SOT-23 A Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 MAXIMUM RATINGS (TA=25 unless otherwise noted) J 0.013 0.10 K Symbol Parameter Value K Units 0.903 1.10 J L VCBO Collector-Base V