AF101O Datasheet and Replacement

   Type Designator: AF101O
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.03 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: X01
     - BJT ⓘ Cross-Reference Search