AF115 Datasheet. Specs and Replacement
Type Designator: AF115 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO7
AF115 Substitution
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AF115 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF115E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF115E DRA3115E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Packa... See More ⇒
Detailed specifications: AF109, AF109R, AF110, AF111, AF112, AF113, AF114, AF114N, S8050, AF115N, AF116, AF116N, AF117, AF117N, AF118, AF121, AF121-07
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