All Transistors. AF115 Datasheet

 

AF115 Datasheet and Replacement


   Type Designator: AF115
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO7
      - BJT Cross-Reference Search

   

AF115 Datasheet (PDF)

 0.1. Size:225K  panasonic
 draf115e.pdf pdf_icon

AF115

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF115EDRA3115E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BR3DD13007HV7R | CK83 | 2SC4600 | 2SD634 | KSD1692 | JE9011F | 2SD1985

Keywords - AF115 transistor datasheet

 AF115 cross reference
 AF115 equivalent finder
 AF115 lookup
 AF115 substitution
 AF115 replacement

 

 
Back to Top

 


 
.