AF144 Datasheet. Specs and Replacement
Type Designator: AF144 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO72
AF144 Substitution
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AF144 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF144T DRA3144T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of ... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF144E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF144E DRA3144E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Pac... See More ⇒
Detailed specifications: AF134, AF135, AF136, AF137, AF138, AF139, AF142, AF143, BC558, AF146, AF147, AF148, AF149, AF150, AF164, AF165, AF166
Keywords - AF144 pdf specs
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History: 2SC4112 | AF138 | AF139
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