All Transistors. AM1011-075 Datasheet

 

AM1011-075 Datasheet and Replacement


   Type Designator: AM1011-075
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 5.4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SO38
 

 AM1011-075 Substitution

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AM1011-075 Datasheet (PDF)

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 am1011-075.pdf pdf_icon

AM1011-075

AM1011-075RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2LFL (S036)hermetically sealed.P = 75 W MIN. WITH 9.2 dB GAINOUTORDER CODE BRANDINGAM1011-075 1011-75DESCRIPTIONPIN CONNE

 5.1. Size:43K  st
 am1011-070.pdf pdf_icon

AM1011-075

AM1011-070RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P = 70 W MIN. WITH 6.7 dB GAINOUT.400 x .400 2NLFL (S042)hermetically sealedORDER CODE BRANDINGAM1011-70 1011-70DESCRIPTIONPIN CONNECTIONThe AM1011-070

 7.1. Size:59K  st
 am1011-300.pdf pdf_icon

AM1011-075

AM1011-300RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTING.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .600 2LFL (M207).P 325 W MIN. WITH 7.7 dB GAINOUT =hermetically sealed.1030/1090 MHZ OPERATIONBRANDINGORDER CODEAM1011-300AM1011-300PIN CONNECTION

 7.2. Size:54K  st
 am1011-500.pdf pdf_icon

AM1011-075

AM1011-500RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.P 500 W MIN. WITH 8.5 dB MIN.OUT =GAIN.10:1 LOAD VSWR CAPABILITY @ 10S.,1% DUTY.SIXPAC HERMETIC METAL/CERAMICPACKAGE.EMITTER SITE BALLASTED OVERLAY.400 x .600 2LFL (M198)GEOMETRYhermetically sealed.REFRACTORY/GOLD METALLIZATION.LOW THERMAL RESISTANCE ORDER CODEBRANDINGAM1011-500.INTERNAL INPUT/OUT

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Datasheet: AM0608-070 , AM0608-200 , AM0608-450 , AM0912-080 , AM0912-150 , AM0912-300 , AM1011-055 , AM1011-070 , 2SC2073 , AM1011-300 , AM1011-400 , AM1011-500 , AM1214-100 , AM1214-175 , AM1214-200 , AM1214-300 , AM1214-325 .

History: 2SD1893 | BD535J | ERS275 | HM5551 | RT1N140C | DTA123YKA | 2SC4367

Keywords - AM1011-075 transistor datasheet

 AM1011-075 cross reference
 AM1011-075 equivalent finder
 AM1011-075 lookup
 AM1011-075 substitution
 AM1011-075 replacement

 

 
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