AM80912-015 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM80912-015
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1200 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SO64
AM80912-015 Transistor Equivalent Substitute - Cross-Reference Search
AM80912-015 Datasheet (PDF)
am80912-085.pdf
AM80912-085RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT = 85 W MIN. WITH 7.5 dB GAINhermetically sealedORDER CODE BRANDINGAM80912-085 80912-85PIN CONNECTIONDESCRIPTION
am80912030.pdf
AM80912-030RF & MICROWAVE TRANSISTORSSPECIALITY AVIONICS/JTIDS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.15:1 VSWR CAPABILITY.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2LFL (S036).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 30 W MIN. WITH 7.8 dB GAIN=OUTBRANDINGORDER CODE80912-30AM80912-030DE
am8091205.pdf
AM80912-005RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.310 x .310 2LFL (S064)hermetically sealed.POUT = 6.0 W MIN. WITH 9.3 dB GAINORDER CODE BRANDINGAM80912-005 80912-5PIN CONNECTIONDESCRIPTION
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
