AM82731-050 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM82731-050
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 56 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3100 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SO36
AM82731-050 Transistor Equivalent Substitute - Cross-Reference Search
AM82731-050 Datasheet (PDF)
am82731-05.pdf
AM82731-050RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGEDIZED VSWR 3:1 @ 1 dB OVER-DRIVE.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2LFL (S036).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 50 W MIN. WITH 6 dB GAINOUT =ORDER CODE BRANDINGAM82731-050 82731-50DESC
am82731-025.pdf
AM82731-025RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.LOW PARASITIC, DOUBLE LEVEL MET-AL DESIGN.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR @ 1 dB OVERDRIVE.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.400 x .400 2LFL (S036).OVERLAY GEOMETRYhermetically sealed.METAL/CERAMIC HERMETIC PACKAGEORDER CODE BRANDING.P 25 W MIN. WITH
am82731-003.pdf
AM82731-003RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT IMPEDANCE MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 3.0 W. MIN. WITH 5.7 dB GAIN=hermetically sealed.BANDWIDTH 400 MHz=ORDER CODE BRANDINGAM 82731
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
