All Transistors. AM83135-005 Datasheet

 

AM83135-005 Datasheet and Replacement


   Type Designator: AM83135-005
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 6 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 1.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SO64
 

 AM83135-005 Substitution

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AM83135-005 Datasheet (PDF)

 5.1. Size:57K  st
 am83135-03.pdf pdf_icon

AM83135-005

AM83135-030RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 5.5 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-030 AM83135-30DESCRIPTIONThe AM83135

 5.2. Size:44K  st
 am83135-04.pdf pdf_icon

AM83135-005

AM83135-040RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 40 W MIN. WITH 5.1 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-040 AM83135-40DESCRIPTIONThe AM83135

 5.3. Size:61K  st
 am83135-05.pdf pdf_icon

AM83135-005

AM83135-005RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 5.0 W MIN. WITH 5.2 dB GAIN=hermetically sealedORDER CODE BRANDINGAM83135-005 83135-5DESCRIPTIONPIN CONNE

 5.4. Size:61K  st
 am83135-015.pdf pdf_icon

AM83135-005

AM83135-015RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 15 W MIN. WITH 5.2 dB GAINOUT =.310 x .310 2LFL (S064)ORDER CODE BRANDINGDESCRIPTION AM83131-015 83135-15The AM83135-015 device is a high po

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BFV81B

Keywords - AM83135-005 transistor datasheet

 AM83135-005 cross reference
 AM83135-005 equivalent finder
 AM83135-005 lookup
 AM83135-005 substitution
 AM83135-005 replacement

 

 
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