AT210 Datasheet. Specs and Replacement
Type Designator: AT210 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
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AT210 Substitution
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AT210 datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Preliminary Datasheet HAT2105R R07DS0552EJ0200 (Previous REJ03G1369-0100) Silicon N Channel Power MOS FET Rev.2.00 High Speed Power Switching Oct 11, 2011 Features Low on-resistance RDS(on) = 1.6 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Capable of 4 V gate drive High density mounting Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8... See More ⇒
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: AT00570, AT17AVA, AT200, AT201, AT202, AT207, AT208, AT209, C945, AT216, AT270, AT275, AT30511, AT31011, AT32011, AT336, AT406
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