AT605 Datasheet and Replacement

   Type Designator: AT605
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO31
     - BJT ⓘ Cross-Reference Search