BC160-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC160-10
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 3.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO39
BC160-10 Transistor Equivalent Substitute - Cross-Reference Search
BC160-10 Datasheet (PDF)
bc160-bc161.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D110BC160; BC161PNP medium power transistorsProduct specification 1997 May 12Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium power transistors BC160; BC161FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2
bc160-bc161.pdf
BC160BC161GENERAL PURPOSE TRANSISTORSDESCRIPTIONThe BC160, and BC161 are silicon planar epitaxialPNP transistors in TO-39 metal case.They are par-ticurlarly designed foraudio amplifiers and switchingapplications up to 1A. The complementary NPNtypes are the BC140 and BC141.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSValueSymbol Parameter UnitBC160 BC161VC
bc160 bc161.pdf
Philips Semiconductors Product specificationPNP medium power transistors BC160; BC161FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS3 collector, connected to case General purpose applications.DESCRIPTION 1handbook, halfpage32PNP medium power transistor in a TO-39 metal package.NPN complements: B
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
