2N2645 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2645
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO18
2N2645 Transistor Equivalent Substitute - Cross-Reference Search
2N2645 Datasheet (PDF)
2n2646 2n2647.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n2647.pdf
2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of pr
2n2646 2n2647.pdf
Boca Semiconductor Corp. (BSC)http://www.bocasemi.comhttp://www.bocasemi.com
Datasheet: 2N2641 , 2N2641DCSM , 2N2642 , 2N2642DCSM , 2N2643 , 2N2643DCSM , 2N2644 , 2N2644DCSM , D882P , 2N2648 , 2N2649 , 2N265 , 2N2650 , 2N2651 , 2N2652 , 2N2652A , 2N2654 .
