All Transistors. BC238C-92 Datasheet

 

BC238C-92 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC238C-92
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 450
   Noise Figure, dB: -
   Package: TO92

 BC238C-92 Transistor Equivalent Substitute - Cross-Reference Search

   

BC238C-92 Datasheet (PDF)

 9.1. Size:112K  motorola
bc237 bc238 bc239.pdf

BC238C-92
BC238C-92

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC237/DAmplifier TransistorsBC237,A,B,CNPN SiliconBC238B,CBC239,CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS2

 9.2. Size:60K  samsung
bc237 bc238 bc239.pdf

BC238C-92
BC238C-92

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC239 TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES V:BC237 50 VBC238/239 30Collector-Emitter Voltage VCEO:BC237 45 VBC238/239 25 VEmitter-Base Voltage VEBO:BC237 6 VBC238/239 5 VCollector Current (DC) IC 100 mA

 9.3. Size:353K  cdil
bc237 bc238 bc239.pdf

BC238C-92
BC238C-92

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC237,238, A,B,CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC239, B,CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC237 BC238 BC239 UNITSCollector Emitter Voltage VCE

 9.4. Size:458K  jiangsu
bc237 bc238 bc239.pdf

BC238C-92
BC238C-92

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC237 / BC238 / BC239 TRANSISTOR (NPN)FEATURES TO-92 Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE BC237 BC238 BC239 3. EMITTER XXX XXX XXX1 1 1Equivalent Circuit BC237,BC238,BC239=Device code Solid dot=Green molding compound device, if none,the normal dev

 9.5. Size:32K  kec
bc237 bc238 bc239.pdf

BC238C-92
BC238C-92

SEMICONDUCTOR BC237/8/9TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.LOW NOISE AMPLIFIER APPLICATION. B CFEATURES High Voltage : BC237 VCEO=45V.Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.)N DIM MILLIMETERS(VCE=6V, IC=0.1mA, f=1kHz).A 4.70 MAXEKFor Complementary With PNP type BC307/308/309. G B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27

 9.7. Size:184K  lge
bc237 bc238 bc239.pdf

BC238C-92
BC238C-92

BC237/238/239(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)Collector-Emitter Voltage BC237 45 VCEO V BC238/239 25 Emitter-Base Voltage BC237 6 VEBO V BC238/239 5 IC Collector C

Datasheet: BC238-92 , BC238A , BC238A-92 , BC238AP , BC238B , BC238B-92 , BC238BP , BC238C , BD138 , BC238CP , BC239 , BC239-92 , BC239A , BC239B , BC239B-92 , BC239BP , BC239C .

 

 
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