2N269 Specs and Replacement
Type Designator: 2N269
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO1
2N269 Substitution
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2N269 datasheet
2N2696CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.004... See More ⇒
Detailed specifications: 2N2673 , 2N2674 , 2N2675 , 2N2676 , 2N2677 , 2N2678 , 2N268 , 2N268A , S9018 , 2N2691 , 2N2691A , 2N2692 , 2N2693 , 2N2694 , 2N2695 , 2N2696 , 2N2697 .
Keywords - 2N269 pdf specs
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