BC338 Datasheet. Specs and Replacement
Type Designator: BC338 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
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BC338 datasheet
..1. Size:119K motorola
bc337 bc338.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 45 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 50 30 Vdc Emitter Base Voltage VEB... See More ⇒
..2. Size:27K fairchild semi
bc337 bc338.pdf
BC337/338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC337 50 V BC338 30 V VCEO Collector-Emitter Volt... See More ⇒
..4. Size:117K cdil
bc327 bc328 bc337 bc338.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C)... See More ⇒
..5. Size:1381K jiangsu
bc337 bc338.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.BASE Symbol Parameter Value Unit 3. EMITTER VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 VE... See More ⇒
..6. Size:338K kec
bc338.pdf
SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current IC=800mA. DC Current Gain hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC328. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.... See More ⇒
..7. Size:172K lge
bc337 bc338.pdf
BC337/338(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Col... See More ⇒
..9. Size:78K first silicon
bc337 bc338.pdf
SEMICONDUCTOR BC337/338 TECHNICAL DATA BC337/BC338 TRANSISTOR (NPN) B C FEATURES High Current IC=800mA. DC Current Gain hFE=100 630 (VCE=1V, Ic=100mA). DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 L 2.30 Symb... See More ⇒
0.1. Size:88K diodes
bc337-16bk bc337-25bk bc337-40bk bc338-16bk bc338-25bk bc338-40bk.pdf
BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2010-05-27 0.1 Power dissipation 625 mW 4.6 Verlustleistung Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 C B E Geh usematerial UL9... See More ⇒
0.2. Size:234K mcc
bc337-16-25-40 bc338-16-25-40.pdf
MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Fin... See More ⇒
0.4. Size:192K auk
sbc338.pdf
SBC338 NPN Silicon Transistor Descriptions PIN Connection High current application C Switching application B Features Suitable for AF-Driver stage and E low power output stages Complementary pair with SBC328 TO-92 Ordering Information Type NO. Marking Package Code SBC338 SBC338 TO-92 Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ra... See More ⇒
0.5. Size:362K secos
bc337~bc338.pdf
BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank B... See More ⇒
Detailed specifications: BC337A-16, BC337A-25, BC337AP, BC337BP, BC337BPL, BC337CP, BC337P, BC337PL, S9013, BC338-01, BC338-10, BC338-16, BC338-25, BC338-40, BC338AP, BC338BP, BC338CP
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