2N2697 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2697
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: MT9
2N2697 Transistor Equivalent Substitute - Cross-Reference Search
2N2697 Datasheet (PDF)
9.3. Size:11K semelab
2n2696csm.pdf
2n2696csm.pdf
2N2696CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 25V A =(0.04 0.004
Datasheet: 2N269 , 2N2691 , 2N2691A , 2N2692 , 2N2693 , 2N2694 , 2N2695 , 2N2696 , 2SC2922 , 2N2698 , 2N2699 , 2N269A , 2N27 , 2N270 , 2N2706 , 2N2706M , 2N2706MP .
