2N269A Specs and Replacement
Type Designator: 2N269A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO1
2N269A Transistor Equivalent Substitute - Cross-Reference Search
2N269A detailed specifications
2n2696csm.pdf
2N2696CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.004... See More ⇒
Detailed specifications: 2N2692 , 2N2693 , 2N2694 , 2N2695 , 2N2696 , 2N2697 , 2N2698 , 2N2699 , BD222 , 2N27 , 2N270 , 2N2706 , 2N2706M , 2N2706MP , 2N2707 , 2N2708 , 2N2709 .
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