All Transistors. 2N269A Datasheet

 

2N269A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N269A
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.12 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO1

 2N269A Transistor Equivalent Substitute - Cross-Reference Search

   

2N269A Datasheet (PDF)

 9.2. Size:230K  no
2n2698.pdf

2N269A 2N269A

 9.3. Size:11K  semelab
2n2696csm.pdf

2N269A

2N2696CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 25V A =(0.04 0.004

Datasheet: 2N2692 , 2N2693 , 2N2694 , 2N2695 , 2N2696 , 2N2697 , 2N2698 , 2N2699 , BD139 , 2N27 , 2N270 , 2N2706 , 2N2706M , 2N2706MP , 2N2707 , 2N2708 , 2N2709 .

 

 
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