BC413C Datasheet, Equivalent, Cross Reference Search
Type Designator: BC413C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 380
Noise Figure, dB: -
Package: TO92
BC413C Transistor Equivalent Substitute - Cross-Reference Search
BC413C Datasheet (PDF)
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC413, B, CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC414, B, CTO-92Plastic PackageEBCABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC413 BC414 UNITSCollector Emitter Voltage VCEO 30 45 VCollector Base Voltage VCBO 45 50 VEmitter Base Voltage VEBO 5.0 VCollector Current
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .