BC414BP Datasheet, Equivalent, Cross Reference Search
Type Designator: BC414BP
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO92
BC414BP Transistor Equivalent Substitute - Cross-Reference Search
BC414BP Datasheet (PDF)
9.1. Size:353K cdil
bc413 bc414 b c.pdf
bc413 bc414 b c.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC413, B, CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC414, B, CTO-92Plastic PackageEBCABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC413 BC414 UNITSCollector Emitter Voltage VCEO 30 45 VCollector Base Voltage VCBO 45 50 VEmitter Base Voltage VEBO 5.0 VCollector Current
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
