BC547B Datasheet, Equivalent, Cross Reference Search
Type Designator: BC547B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
BC547B Transistor Equivalent Substitute - Cross-Reference Search
BC547B Datasheet (PDF)
0.1. bc547b bc547c.pdf 
Size:60K _st
BC547B BC547C ® SMALL SIGNAL NPN TRANSISTORS Ordering Code Marking Package / Shipment BC547B BC547B TO-92 / Bulk BC547B-AP BC547B TO-92 / Ammopack BC547C BC547C TO-92 / Bulk BC547C-AP BC547C TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 BC547B - THE PNP COMPLEMENTARY Bulk Ammopack TYPE IS BC557B AP
0.2. bc547 bc547a bc547b bc547c.pdf Size:26K _fairchild_semi
Discrete POWER & Signal Technologies BC547 BC547A BC547B BC547C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-
0.3. bc547ba3.pdf Size:412K _cystek
Spec. No. : C204A3 Issued Date : 2015.01.23 CYStech Electronics Corp. Revised Date : Page No. : 1 / 7 General Purpose NPN Epitaxial Planar Transistor BC547BA3 Description • The BC547BA3 is designed for use in driver stage of AF amplifier and low speed switching. • Complementary to BC557BA3. • Pb-free package Symbol Outline BC547BA3 TO-92 B：Base C：Collector
0.4. bc546abk bc547abk bc548abk bc549abk bc546bbk bc547bbk bc548bbk bc549bbk bc546cbk bc547cbk bc548cbk bc549cbk.pdf Size:81K _diotec
BC546xBK ... BC549xBK BC546xBK ... BC549xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-03 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
