BC557 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC557
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: X10
BC557 Transistor Equivalent Substitute - Cross-Reference Search
BC557 Datasheet (PDF)
bc556 bc557 bc558 2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC BC BC3556 557 558Rating Symbol UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 65 45 30 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 80 50 30 Vdc
bc556 bc557 bc558.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC BC BC3556 557 558Rating Symbol UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 65 45 30 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 80 50 30 Vdc
bc556 bc557 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC556; BC557PNP general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationPNP general purpose transistors BC556; BC557FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS
bc556 bc557.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BC556; BC557PNP general purpose transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetPNP general purpose transistors BC556; BC557FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS3 colle
bc556 bc557 bc558 bc559 bc560.pdf
BC556/557/558/559/560Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 V
bc556 bc557 bc558.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORSBC557, A, B, CBC558, A, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC556 BC557 BC558 UNITSCollector Emi
bc556 bc557 bc558.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 BC556/BC557/BC558 TRANSISTOR (PNP) FEATURES High Voltage1. COLLECTOR Complement to BC546,BC547,BC548 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitBC556 -80VCBO Collector-Base Voltage BC557 -50 V BC558 -30BC556 -6
bc556 bc557 bc558.pdf
SEMICONDUCTOR BC556/7/8TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .B CFEATURESFor Complementary With NPN Type BC546/547/548.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_H J 14.00 + 0.50BC556 -80K 0.55 M
bc556 bc557 bc558.pdf
BC556/557/558(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30-65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeter
bc556 bc557 bc558.pdf
BC556, A/BBC557, A/B/CBC558, A/B/CPNP General Purpose TransistorCOLLECTOR3P b Lead(Pb)-Free2BASE1231EMITTERTO-92Maximum Ratings ( T =25 C unless otherwise noted)ARating Symbol BC556 BC557 BC558 UnitV -65 -45Collector-Emitter Voltage ECO -30V-30VCollector-Base Voltage CBO -80 -50 VVEBOEmitter-Base Voltage -5 -5 -5 Vl 100Collector Curre
bc557.pdf
BC557 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92(R) PNP Silicon PNP transistor in a TO-92(R) Plastic Package. / Features Low current, Low voltage. / Applications General purpose and switching application. / Equivalent Circuit
bc557b.pdf
BC557BSMALL SIGNAL PNP TRANSISTOROrdering Code Marking Package / ShipmentBC557B BC557B TO-92 / BulkBC557B-AP BC557B TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNPTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISBC547BTO-92 TO-92Bulk AmmopackAPPLICATIONS WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMALL LOAD SWIT
bc556abu bc556ata bc556bta bc556btf bc556btfr bc557ata bc557bta bc557btf bc558bta bc559bta bc559cta bc560cta.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bc556b bc557a-b-c bc558b.pdf
BC556B, BC557A, B, C,BC558BAmplifier TransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS 2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc3BC556 -65EMITTERBC557 -45BC558 -30Collector - Base Voltage VCBO VdcBC556 -80BC557 -50BC558 -30TO-92Emitter - Base Voltage VEBO -5.0 Vdc CASE
sbc557.pdf
SBC557SemiconductorSemiconductorPNP Silicon TransistorDescriptions General purpose application Switching applicationFeatures High voltage : VCEO=-45V Complementary pair with SBC547Ordering InformationType NO. Marking Package Code SBC557 SBC557 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54 Typ.
bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf
BC556xBK ... BC559xBKBC556xBK ... BC559xBKGeneral Purpose Si-Epitaxial PlanarTransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-070.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .