All Transistors. BC557 Datasheet

 

BC557 Datasheet, Equivalent, Cross Reference Search

Type Designator: BC557

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: X10

BC557 Transistor Equivalent Substitute - Cross-Reference Search

 

BC557 Datasheet (PDF)

1.1. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _update

BC557
BC557

BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-07 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial

1.2. bc556 bc557 bc558 2.pdf Size:220K _motorola

BC557
BC557

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –65 –45 –30 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO

 1.3. bc556 bc557 bc558.pdf Size:159K _motorola

BC557
BC557

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –65 –45 –30 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO

1.4. bc556 bc557.pdf Size:246K _philips

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BC557

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector •

 1.5. bc556 bc557 3.pdf Size:53K _philips

BC557
BC557

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 coll

1.6. bc557b.pdf Size:70K _st

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BC557

BC557B ® SMALL SIGNAL PNP TRANSISTOR Ordering Code Marking Package / Shipment BC557B BC557B TO-92 / Bulk BC557B-AP BC557B TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS BC547B TO-92 TO-92 Bulk Ammopack APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH T

1.7. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

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BC557

BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Col

1.8. bc556b bc557a-b-c bc558b.pdf Size:81K _onsemi

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BC557

BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE 29

1.9. sbc557.pdf Size:94K _auk

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BC557

SBC557 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with SBC547 Ordering Information Type NO. Marking Package Code SBC557 SBC557 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1

1.10. bc556 bc557 bc558.pdf Size:353K _cdil

BC557
BC557

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emitter

1.11. bc556 bc557 bc558.pdf Size:274K _kec

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BC557

SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 MAX

1.12. bc556 bc557 bc558.pdf Size:2241K _wietron

BC557
BC557

BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ? ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Current Co

Datasheet: BC550CP , BC551 , BC556 , BC556A , BC556AP , BC556B , BC556BP , BC556VI , BC558 , BC557A , BC557AP , BC557B , BC557BP , BC557C , BC557VI , BC558 , BC558A .

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